High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Evelin Fisslthaler, Georg Haberfehlner, Christian Gspan, Gernot Gruber, Werner Grogger

Research output: Contribution to journalArticleResearchpeer-review

Abstract


Original languageEnglish
Article number113366
Number of pages6
JournalMicroelectronics Reliability
Volume100-101
DOIs
Publication statusPublished - 2019

ASJC Scopus subject areas

  • Materials Science(all)

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

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