Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)

Adrian Ruckhofer, Anton Tamtögl, Michael Pusterhofer, Martin Bremholm, Wolfgang E. Ernst

Research output: Contribution to journalArticleResearchpeer-review

Abstract

We present a study of the atom-surface interaction potential for the He-Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom-surface interaction potential. Based on quantum mechanical calculations of the He-surface scattering intensities and resonance processes, we are then considering the three-dimensional atom-surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He-Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 ± 0.05) meV, a stiffness of κ = (0.58 ± 0.02) Å-1, and a surface electronic corrugation of (5.8 ± 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.

Original languageEnglish
Pages (from-to)17829-17841
Number of pages13
JournalJournal of Physical Chemistry C
Volume123
Issue number29
DOIs
Publication statusPublished - 25 Jul 2019

Fingerprint

Helium
surface reactions
helium
Atoms
electronics
atoms
Adsorption
adsorption
Morse potential
Surface scattering
Surface potential
scattering
Band structure
Lattice constants
stiffness
Stiffness
insulators
interactions
Scattering
approximation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Fields of Expertise

  • Advanced Materials Science

Cite this

Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111). / Ruckhofer, Adrian; Tamtögl, Anton; Pusterhofer, Michael; Bremholm, Martin; Ernst, Wolfgang E.

In: Journal of Physical Chemistry C, Vol. 123, No. 29, 25.07.2019, p. 17829-17841.

Research output: Contribution to journalArticleResearchpeer-review

@article{a9f5177edf3a499384dee397cd2e1904,
title = "Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)",
abstract = "We present a study of the atom-surface interaction potential for the He-Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom-surface interaction potential. Based on quantum mechanical calculations of the He-surface scattering intensities and resonance processes, we are then considering the three-dimensional atom-surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He-Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 ± 0.05) meV, a stiffness of κ = (0.58 ± 0.02) {\AA}-1, and a surface electronic corrugation of (5.8 ± 0.2){\%} of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.",
author = "Adrian Ruckhofer and Anton Tamt{\"o}gl and Michael Pusterhofer and Martin Bremholm and Ernst, {Wolfgang E.}",
year = "2019",
month = "7",
day = "25",
doi = "10.1021/acs.jpcc.9b03450",
language = "English",
volume = "123",
pages = "17829--17841",
journal = "The journal of physical chemistry (Washington, DC) / C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "29",

}

TY - JOUR

T1 - Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111)

AU - Ruckhofer, Adrian

AU - Tamtögl, Anton

AU - Pusterhofer, Michael

AU - Bremholm, Martin

AU - Ernst, Wolfgang E.

PY - 2019/7/25

Y1 - 2019/7/25

N2 - We present a study of the atom-surface interaction potential for the He-Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom-surface interaction potential. Based on quantum mechanical calculations of the He-surface scattering intensities and resonance processes, we are then considering the three-dimensional atom-surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He-Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 ± 0.05) meV, a stiffness of κ = (0.58 ± 0.02) Å-1, and a surface electronic corrugation of (5.8 ± 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.

AB - We present a study of the atom-surface interaction potential for the He-Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom-surface interaction potential. Based on quantum mechanical calculations of the He-surface scattering intensities and resonance processes, we are then considering the three-dimensional atom-surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He-Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 ± 0.05) meV, a stiffness of κ = (0.58 ± 0.02) Å-1, and a surface electronic corrugation of (5.8 ± 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.

UR - http://www.scopus.com/inward/record.url?scp=85071227628&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.9b03450

DO - 10.1021/acs.jpcc.9b03450

M3 - Article

VL - 123

SP - 17829

EP - 17841

JO - The journal of physical chemistry (Washington, DC) / C

JF - The journal of physical chemistry (Washington, DC) / C

SN - 1932-7447

IS - 29

ER -