Ginzburg-Landau theory of Josephson field effect transistors

J. J. Betouras, Robert Joynt, Zi Wen Dong, T. Venkatesan, Peter Hadley

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    Abstract

    A theoretical model of high-Tc Josephson field effect transistors (JoFETs) based on a Ginzburg-Landau free energy expression whose parameters are field- and spatially-dependent is developed. This model is used to explain experimental data on JoFETs made by the hole-overdoped Ca-SBCO bicrystal junctions (three terminal devices). The measurements showed a large modulation of the critical current as a function of the applied voltage due to charge modulation in the bicrystal junction. The experimental data agree with the solutions of the theoretical model. This provides an explanation of the large field effect, based on the strong suppression of the carrier density near the grain boundary junction in the absence of applied field, and the subsequent modulation of the density by the field.

    Original languageEnglish
    Pages (from-to)2432-2434
    Number of pages3
    JournalApplied Physics Letters
    Volume69
    Issue number16
    Publication statusPublished - 14 Oct 1996

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Betouras, J. J., Joynt, R., Dong, Z. W., Venkatesan, T., & Hadley, P. (1996). Ginzburg-Landau theory of Josephson field effect transistors. Applied Physics Letters, 69(16), 2432-2434.