Gate Oxide Modification by Application of Reactive Dipole Layers: The Effect on Organic Field Effect Transistor Characteristics

Peter Pacher; Alexandra Lex; Veronika Proschek; Christoph Auner; Stephan Rentenberger; Oliver Werzer; Paul Frank; Susanne Temmel; Roland Resel; Adolf Winkler; Robert Schennach; Christian Slugovc; Gregor Trimmel; Egbert Zojer

Gate Oxide Modification by Application of Reactive Dipole Layers: The Effect on Organic Field Effect Transistor Characteristics

Peter Pacher, Alexandra Lex, Veronika Proschek, Christoph Auner, Stephan Rentenberger, Oliver Werzer, Paul Frank, Susanne Temmel, Roland Resel, Adolf Winkler, Robert Schennach, Christian Slugovc, Gregor Trimmel, Egbert Zojer

Research output: Contribution to conference › (Old data) Lecture or Presentation

Original language	English
Publication status	Published - 22 May 2006
Event	SFB Seminar - Duration: 22 May 2006 → …

Seminar

Seminar	SFB Seminar
Period	22/05/06 → …

Cite this

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title = "Gate Oxide Modification by Application of Reactive Dipole Layers: The Effect on Organic Field Effect Transistor Characteristics",

author = "Peter Pacher and Alexandra Lex and Veronika Proschek and Christoph Auner and Stephan Rentenberger and Oliver Werzer and Paul Frank and Susanne Temmel and Roland Resel and Adolf Winkler and Robert Schennach and Christian Slugovc and Gregor Trimmel and Egbert Zojer",

year = "2006",

month = may,

day = "22",

language = "English",

note = "SFB Seminar ; Conference date: 22-05-2006",

}

TY - CONF

T1 - Gate Oxide Modification by Application of Reactive Dipole Layers: The Effect on Organic Field Effect Transistor Characteristics

AU - Pacher, Peter

AU - Lex, Alexandra

AU - Proschek, Veronika

AU - Auner, Christoph

AU - Rentenberger, Stephan

AU - Werzer, Oliver

AU - Frank, Paul

AU - Temmel, Susanne

AU - Resel, Roland

AU - Winkler, Adolf

AU - Schennach, Robert

AU - Slugovc, Christian

AU - Trimmel, Gregor

AU - Zojer, Egbert

PY - 2006/5/22

Y1 - 2006/5/22

M3 - (Old data) Lecture or Presentation

T2 - SFB Seminar

Y2 - 22 May 2006

ER -