Abstract
Double barrier memristive devices are under investigation, which consist of a 2.5 nm thick NbOx (or HfOx) layersandwiched between an Al2O3 tunnel barrier and a Schottky-like contact to an Au top electrode. These devices showbipolar interface-based analogue resistive switching which is most probably due to the migration of oxygen vacanciesthat change the interfacial properties [1]. Inside the tunnel barrier, argon and oxygen gas was found in pores of FIBlamellas which are vacuum-tightly encapsulated in the thin film. The formation and the influence of these pores on thedevices are analyzed in this study.
| Original language | English |
|---|---|
| Pages | 247-248 |
| Publication status | Published - 2021 |
| Event | 2021 Microscopy Conference: MC 2021 - Virtuell, Austria Duration: 22 Aug 2021 → 26 Aug 2021 |
Conference
| Conference | 2021 Microscopy Conference |
|---|---|
| Abbreviated title | MC 2021 |
| Country/Territory | Austria |
| City | Virtuell |
| Period | 22/08/21 → 26/08/21 |
ASJC Scopus subject areas
- General Materials Science
Fields of Expertise
- Advanced Materials Science
Treatment code (Nähere Zuordnung)
- Basic - Fundamental (Grundlagenforschung)
