Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance (e & i Elektrotechnik und Informationstechnik, (2018), 135, 1, (69-75), 10.1007/s00502-017-0569-0)

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Abstract

Erratum to: Elektrotechnik & Informationstechnik (2018) 135/1: 69–75https://doi.org/10.1007/s00502-017-0569-0 Following Acknowledgement was missing: The financial support of the presented research work by the Austrian Science Fund (FWF) under the project number T 756-N20 is gratefully acknowledged.

Original languageEnglish
Journale&i - Elektrotechnik und Informationstechnik
DOIs
Publication statusE-pub ahead of print - 1 Jan 2018

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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