Epitaxial growth of para-hexaphenyl on GaAs(001)-2×4

Kurt Erlacher; Roland Resel; S. Hampel; T. Kuhlmann; K. Lischka; B. Müller; A. Thierry; B. Lotz; Günther Leising

Epitaxial growth of para-hexaphenyl on GaAs(001)-2×4

Kurt Erlacher, Roland Resel, S. Hampel, T. Kuhlmann, K. Lischka, B. Müller, A. Thierry, B. Lotz, Günther Leising

Institute of Solid State Physics (5130)

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	191-197
Journal	Surface Science
Volume	437
Issue number	1-2
Publication status	Published - 1999

Treatment code (Nähere Zuordnung)

Experimental

Cite this

@article{efd952798d324ce48828778194f2924b,

title = "Epitaxial growth of para-hexaphenyl on GaAs(001)-2×4",

author = "Kurt Erlacher and Roland Resel and S. Hampel and T. Kuhlmann and K. Lischka and B. M{\"u}ller and A. Thierry and B. Lotz and G{\"u}nther Leising",

year = "1999",

language = "English",

volume = "437",

pages = "191--197",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-2",

}