Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness

Simon Josef Außerlechner, Marco Marchl, Heinz-Georg Flesch, Anja Haase, Barbara Stadlober, Peter Pacher, Roland Resel, Christian Slugovc, Gregor Trimmel, Egbert Zojer

Research output: Contribution to conferencePosterResearch

Original languageEnglish
Publication statusPublished - 2009
EventInternational Conference on Organic Electronics 2009 - University of Liverpool, Liverpool, UK
Duration: 15 Jun 200917 Jun 2009

Conference

ConferenceInternational Conference on Organic Electronics 2009
CityUniversity of Liverpool, Liverpool, UK
Period15/06/0917/06/09

Cite this

Außerlechner, S. J., Marchl, M., Flesch, H-G., Haase, A., Stadlober, B., Pacher, P., ... Zojer, E. (2009). Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK, .

Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. / Außerlechner, Simon Josef; Marchl, Marco; Flesch, Heinz-Georg; Haase, Anja; Stadlober, Barbara; Pacher, Peter; Resel, Roland; Slugovc, Christian; Trimmel, Gregor; Zojer, Egbert.

2009. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK, .

Research output: Contribution to conferencePosterResearch

Außerlechner, SJ, Marchl, M, Flesch, H-G, Haase, A, Stadlober, B, Pacher, P, Resel, R, Slugovc, C, Trimmel, G & Zojer, E 2009, 'Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness' International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK, 15/06/09 - 17/06/09, .
Außerlechner SJ, Marchl M, Flesch H-G, Haase A, Stadlober B, Pacher P et al. Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. 2009. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK, .
Außerlechner, Simon Josef ; Marchl, Marco ; Flesch, Heinz-Georg ; Haase, Anja ; Stadlober, Barbara ; Pacher, Peter ; Resel, Roland ; Slugovc, Christian ; Trimmel, Gregor ; Zojer, Egbert. / Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness. Poster session presented at International Conference on Organic Electronics 2009, University of Liverpool, Liverpool, UK, .
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T1 - Electronic properties of organic thin-film transistors containing a chemically reactive, acidic interfacial layer between the gate dielectric and the active material: impact of layer thickness

AU - Außerlechner, Simon Josef

AU - Marchl, Marco

AU - Flesch, Heinz-Georg

AU - Haase, Anja

AU - Stadlober, Barbara

AU - Pacher, Peter

AU - Resel, Roland

AU - Slugovc, Christian

AU - Trimmel, Gregor

AU - Zojer, Egbert

PY - 2009

Y1 - 2009

UR - http://icoe09.com/

M3 - Poster

ER -