Electron transport in silicon quantum wire devices

Gerald Ossig, Ferdinand Schürrer

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)515-521
JournalInternational journal of nanoscience
Volume8
DOIs
Publication statusPublished - 2009

Fields of Expertise

  • Information, Communication & Computing

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

Cite this

Electron transport in silicon quantum wire devices. / Ossig, Gerald; Schürrer, Ferdinand.

In: International journal of nanoscience, Vol. 8, 2009, p. 515-521.

Research output: Contribution to journalArticleResearchpeer-review

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