Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

Gernot Gruber, Peter Hadley, Markus Koch, Thomas Aichinger

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)043506-043506
JournalApplied Physics Letters
Volume105
DOIs
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Experimental

Cite this

Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor. / Gruber, Gernot; Hadley, Peter; Koch, Markus; Aichinger, Thomas.

In: Applied Physics Letters, Vol. 105, 2014, p. 043506-043506.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Hadley, Peter

AU - Koch, Markus

AU - Aichinger, Thomas

PY - 2014

Y1 - 2014

UR - http://dx.doi.org/10.1063/1.4891847

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JF - Applied Physics Letters

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