Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

Gernot Gruber, Peter Hadley, Markus Koch, Thomas Aichinger

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)043506-043506
JournalApplied Physics Letters
Volume105
DOIs
Publication statusPublished - 2014

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Experimental

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