Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions

Z. W. Dong, V. C. Matijasevic, P. Hadley, S. M. Shao, J. E. Mooij

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.

Original languageEnglish
Pages (from-to)2879-2882
Number of pages4
JournalIEEE transactions on applied superconductivity
Volume5
Issue number2
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

Electric field effects
Bicrystals
bicrystals
Electric fields
electric fields
Critical currents
Grain boundaries
Josephson junctions
Thin films
critical current
grain boundaries
Electric potential
Substrates
electric potential
thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

Cite this

Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions. / Dong, Z. W.; Matijasevic, V. C.; Hadley, P.; Shao, S. M.; Mooij, J. E.

In: IEEE transactions on applied superconductivity, Vol. 5, No. 2, 1995, p. 2879-2882.

Research output: Contribution to journalArticleResearchpeer-review

Dong, Z. W. ; Matijasevic, V. C. ; Hadley, P. ; Shao, S. M. ; Mooij, J. E. / Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions. In: IEEE transactions on applied superconductivity. 1995 ; Vol. 5, No. 2. pp. 2879-2882.
@article{e10b4330ce0a4079800f20bcab409040,
title = "Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions",
abstract = "A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30{\%} of the Sm was replaced by Ca. The critical current of the junction was modulated 23{\%} by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.",
author = "Dong, {Z. W.} and Matijasevic, {V. C.} and P. Hadley and Shao, {S. M.} and Mooij, {J. E.}",
year = "1995",
doi = "10.1109/77.403193",
language = "English",
volume = "5",
pages = "2879--2882",
journal = "IEEE transactions on applied superconductivity",
issn = "1051-8223",
publisher = "Institute of Electrical and Electronics Engineers",
number = "2",

}

TY - JOUR

T1 - Electric Field Effect in Sm1-xCaxBa2Cu3Oy Bicrystal Junctions

AU - Dong, Z. W.

AU - Matijasevic, V. C.

AU - Hadley, P.

AU - Shao, S. M.

AU - Mooij, J. E.

PY - 1995

Y1 - 1995

N2 - A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.

AB - A three terminal device was fabricated by depositing a thin film of Ca-doped SmBa2Cu3Oy on a bicrystal SrTiO3 substrate and then structuring a gate over the resulting junction. The channel shows RSJ-like Josephson junction behavior. By applying a voltage to the gate, a large electric field effect was observed. The largest field effect was observed in films where 30% of the Sm was replaced by Ca. The critical current of the junction was modulated 23% by the application of an electric field of 5x105 V/cm. This electric field is about 100 times smaller than the electric field necessary for the field effects observed in homogeneous films. The sign of the field effect is consistent with that expected for a carrier-depleted grain boundary region.

UR - http://www.scopus.com/inward/record.url?scp=0029322460&partnerID=8YFLogxK

U2 - 10.1109/77.403193

DO - 10.1109/77.403193

M3 - Article

VL - 5

SP - 2879

EP - 2882

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

SN - 1051-8223

IS - 2

ER -