Efficient approach to the ab initio Hartree-Fock problem of solids, with application to diamond and silicon

W. von der Linden, P. Fulde, K.-P. Bohnen

Research output: Contribution to journalArticleResearchpeer-review

Abstract

The nonlocal exchange (Hartree-Fock approximation), as a crucial quantity in the correct description of the many-body problem, is gaining increasing attention in the field of electronic structures of solids. Because of the nonlocality, the numerical solution of the Hartree-Fock equation is very cumbersome and ab initio Hartree-Fock methods for solids are just now being developed. We suggest an efficient approximation scheme which yields the Fock matrix and the total energy as well as the band structure. Numerical results for diamond and silicon are presented.
Original languageEnglish
Pages (from-to)1063
Number of pages1
JournalPhysical review / E
Volume34
Issue number2
DOIs
Publication statusPublished - 1 Jul 1986

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Strombus or kite or diamond
Silicon
diamonds
many body problem
Nonlocality
Band Structure
Hartree approximation
Electronic Structure
silicon
Approximation Scheme
Numerical Solution
electronic structure
Numerical Results
Approximation
matrices
Energy
approximation
energy

Cite this

Efficient approach to the ab initio Hartree-Fock problem of solids, with application to diamond and silicon. / von der Linden, W.; Fulde, P.; Bohnen, K.-P.

In: Physical review / E, Vol. 34, No. 2, 01.07.1986, p. 1063.

Research output: Contribution to journalArticleResearchpeer-review

@article{9eb6ee24474e48d4bf7762ad8d0d6f93,
title = "Efficient approach to the ab initio Hartree-Fock problem of solids, with application to diamond and silicon",
abstract = "The nonlocal exchange (Hartree-Fock approximation), as a crucial quantity in the correct description of the many-body problem, is gaining increasing attention in the field of electronic structures of solids. Because of the nonlocality, the numerical solution of the Hartree-Fock equation is very cumbersome and ab initio Hartree-Fock methods for solids are just now being developed. We suggest an efficient approximation scheme which yields the Fock matrix and the total energy as well as the band structure. Numerical results for diamond and silicon are presented.",
author = "{von der Linden}, W. and P. Fulde and K.-P. Bohnen",
year = "1986",
month = "7",
day = "1",
doi = "10.1103/PhysRevB.34.1063",
language = "English",
volume = "34",
pages = "1063",
journal = "Physical review / E",
issn = "1063-651X",
publisher = "American Physical Society",
number = "2",

}

TY - JOUR

T1 - Efficient approach to the ab initio Hartree-Fock problem of solids, with application to diamond and silicon

AU - von der Linden, W.

AU - Fulde, P.

AU - Bohnen, K.-P.

PY - 1986/7/1

Y1 - 1986/7/1

N2 - The nonlocal exchange (Hartree-Fock approximation), as a crucial quantity in the correct description of the many-body problem, is gaining increasing attention in the field of electronic structures of solids. Because of the nonlocality, the numerical solution of the Hartree-Fock equation is very cumbersome and ab initio Hartree-Fock methods for solids are just now being developed. We suggest an efficient approximation scheme which yields the Fock matrix and the total energy as well as the band structure. Numerical results for diamond and silicon are presented.

AB - The nonlocal exchange (Hartree-Fock approximation), as a crucial quantity in the correct description of the many-body problem, is gaining increasing attention in the field of electronic structures of solids. Because of the nonlocality, the numerical solution of the Hartree-Fock equation is very cumbersome and ab initio Hartree-Fock methods for solids are just now being developed. We suggest an efficient approximation scheme which yields the Fock matrix and the total energy as well as the band structure. Numerical results for diamond and silicon are presented.

U2 - 10.1103/PhysRevB.34.1063

DO - 10.1103/PhysRevB.34.1063

M3 - Article

VL - 34

SP - 1063

JO - Physical review / E

JF - Physical review / E

SN - 1063-651X

IS - 2

ER -