Dependence of ESD charge voltage on humidity in data centers: Part III - Estimation of ESD-related risk in data centers using voltage level extrapolation and Chebyshev's inequality

Xu Gao, Atieh Talebzadeh, Mahdi Moradian, Yunan Han, David E. Swenson, David Pommerenke

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper is the third in a series that investigates the electrostatic discharge (ESD)-related voltages and risks in data centers. This paper analyzes the risk of damage or upset under the following environmental conditions: 45% relative humidity (RH), 25% RH, and 8% RH at 27°C, and 8% RH at 38°C. The main purpose of this study is to evaluate the increase of ESD-related upsets or failures caused by reducing the RH from 25% to 8%. The pattern walking test, random walking test, and extrapolation method described by Moradian et al. (2014) are used in this paper. As the distribution function of the tribo-charging-induced voltage is not directly known, Chebyshev's inequality is used to predict the upper bound for the probability of ESD-related failures.

Original languageEnglish
Pages (from-to)49-57
Number of pages9
JournalASHRAE Conference-Papers
Volume121
Publication statusPublished - 1 Jan 2015
Externally publishedYes
Event2015 ASHRAE Winter Conference - Chicago, United States
Duration: 24 Jan 201528 Jan 2015

ASJC Scopus subject areas

  • Building and Construction
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Dependence of ESD charge voltage on humidity in data centers: Part III - Estimation of ESD-related risk in data centers using voltage level extrapolation and Chebyshev's inequality'. Together they form a unique fingerprint.

Cite this