Critical Evaluation of Organic Thin-Film Transistor Models

Markus Krammer, James W. Borchert, Andreas Petritz, Esther Karner-Petritz, Gerburg Schider, Barbara Stadlober, Hagen Klauk, Karin Zojer

Research output: Contribution to journalArticle

Abstract

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.
Original languageEnglish
JournalarXiv.org e-Print archive
Publication statusPublished - 20 Dec 2018

Keywords

  • cond-mat.mes-hall
  • cond-mat.mtrl-sci
  • physics.app-ph

Fields of Expertise

  • Advanced Materials Science

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