Characterization of human metal ESD reference discharge event and correlation of generator parameters to failure levels - Part II: Correlation of generator parameters to failure levels

Kai Wang*, David Pommerenke, Ramachandran Chundru, Tom Van Doren, Federico Pio Centola, Jiu Sheng Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Most electrostatic discharge (ESD) generators are built in accordance with the IEC 61000-4-2 specifications. It is shown, that the voltage induced in a small loop correlates with the failure level observed in an ESD failure test on the systems comprised of fast CMOS devices, while rise time and derivative of the discharge current did not correlate well. The electric parameters of typical ESD generators and ESD generators that have been modified to reflect the current and field parameters of the human metal reference event are compared and the effect on the failure level of fast CMOS electronics is investigated. The consequences of aligning an ESD standard with the suggestions of the first paper, of this two-paper series, are discussed with respect to reproducibility and test severity.

Original languageEnglish
Pages (from-to)505-511
Number of pages7
JournalIEEE Transactions on Electromagnetic Compatibility
Volume46
Issue number4
DOIs
Publication statusPublished - 1 Nov 2004
Externally publishedYes

Keywords

  • Electrostatic discharge (ESD) generator
  • Fast CMOS system
  • Induced loop voltage

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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