Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition

Michael Haas; Viktor-Stavros Christopoulos; Judith Radebner; Michael Holthausen; Thomas Lainer; Lukas Schuh; Harald Matthias Fitzek; Gerald Kothleitner; Ana Torvisco Gomez; Roland Fischer; Odo Wunnicke; Harald Stüger

doi:DOI:10.1002/anie.201707525

Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition

Michael Haas, Viktor-Stavros Christopoulos, Judith Radebner, Michael Holthausen, Thomas Lainer, Lukas Schuh, Harald Matthias Fitzek, Gerald Kothleitner, Ana Torvisco Gomez, Roland Fischer, Odo Wunnicke, Harald Stüger

Research output: Contribution to journal › Article

Abstract

Herein aconvenient synthetic method to obtain2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasi-lane 4 on amultigram scale is presented. Proton-coupled29Si NMR spectroscopyand single-crystal X-raycrystallogra-phy enabled unequivocal structural assignment. Owing to theirunique properties,which are reflected in their nonpyrophoriccharacter on contact with air and their enhanced lightabsorption above 250 nm, 3 and 4 are valuable precursorsfor liquid-phase deposition (LPD) and the processing of thinsilicon films.Amorphous silicon (a-Si:H) films of excellentquality were deposited starting from 3 and characterized byconductivity measurements,ellipsometry,optical microscopy,and Raman spectroscopy.

Original language	English
Pages (from-to)	14259-14262
Journal	Angewandte Chemie
Volume	56
DOIs	https://doi.org/DOI:10.1002/anie.201707525
Publication status	Published - 2017

ASJC Scopus subject areas

Materials Science(all)

Fields of Expertise

Advanced Materials Science

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)

Access to Document

DOI:10.1002/anie.201707525Licence: Other

Cite this

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title = "Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition",

abstract = "Herein aconvenient synthetic method to obtain2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasi-lane 4 on amultigram scale is presented. Proton-coupled29Si NMR spectroscopyand single-crystal X-raycrystallogra-phy enabled unequivocal structural assignment. Owing to theirunique properties,which are reflected in their nonpyrophoriccharacter on contact with air and their enhanced lightabsorption above 250 nm, 3 and 4 are valuable precursorsfor liquid-phase deposition (LPD) and the processing of thinsilicon films.Amorphous silicon (a-Si:H) films of excellentquality were deposited starting from 3 and characterized byconductivity measurements,ellipsometry,optical microscopy,and Raman spectroscopy.",

author = "Michael Haas and Viktor-Stavros Christopoulos and Judith Radebner and Michael Holthausen and Thomas Lainer and Lukas Schuh and Fitzek, {Harald Matthias} and Gerald Kothleitner and {Torvisco Gomez}, Ana and Roland Fischer and Odo Wunnicke and Harald St{\"u}ger",

year = "2017",

doi = "DOI:10.1002/anie.201707525",

language = "English",

volume = "56",

pages = "14259--14262",

journal = "Angewandte Chemie",

issn = "1521-3757",

publisher = "Wiley-VCH ",

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TY - JOUR

T1 - Branched Hydrosilane Oligomers as Ideal Precursors for Liquid-Based Silicon-Film Deposition

AU - Haas, Michael

AU - Christopoulos, Viktor-Stavros

AU - Radebner, Judith

AU - Holthausen, Michael

AU - Lainer, Thomas

AU - Schuh, Lukas

AU - Fitzek, Harald Matthias

AU - Kothleitner, Gerald

AU - Torvisco Gomez, Ana

AU - Fischer, Roland

AU - Wunnicke, Odo

AU - Stüger, Harald

PY - 2017

Y1 - 2017

N2 - Herein aconvenient synthetic method to obtain2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasi-lane 4 on amultigram scale is presented. Proton-coupled29Si NMR spectroscopyand single-crystal X-raycrystallogra-phy enabled unequivocal structural assignment. Owing to theirunique properties,which are reflected in their nonpyrophoriccharacter on contact with air and their enhanced lightabsorption above 250 nm, 3 and 4 are valuable precursorsfor liquid-phase deposition (LPD) and the processing of thinsilicon films.Amorphous silicon (a-Si:H) films of excellentquality were deposited starting from 3 and characterized byconductivity measurements,ellipsometry,optical microscopy,and Raman spectroscopy.

AB - Herein aconvenient synthetic method to obtain2,2,3,3-tetrasilyltetrasilane 3 and 2,2,3,3,4,4-hexasilylpentasi-lane 4 on amultigram scale is presented. Proton-coupled29Si NMR spectroscopyand single-crystal X-raycrystallogra-phy enabled unequivocal structural assignment. Owing to theirunique properties,which are reflected in their nonpyrophoriccharacter on contact with air and their enhanced lightabsorption above 250 nm, 3 and 4 are valuable precursorsfor liquid-phase deposition (LPD) and the processing of thinsilicon films.Amorphous silicon (a-Si:H) films of excellentquality were deposited starting from 3 and characterized byconductivity measurements,ellipsometry,optical microscopy,and Raman spectroscopy.

U2 - DOI:10.1002/anie.201707525

DO - DOI:10.1002/anie.201707525

M3 - Article

SN - 1521-3757

VL - 56

SP - 14259

EP - 14262

JO - Angewandte Chemie

JF - Angewandte Chemie

ER -