Abstract
The basis of modern electronics and information processing is the control of the electric properties of semiconductors with microwave fields. Speeding up electronics requires extending this control to optical frequencies. We apply attosecond solid state spectroscopy to investigate and compare light field induced ultrafast carrier dynamics in a prototypical semiconductor (silicon) and dielectric (SiO2). After excitation by a highly intense few-cycle visible laser pulse, a time-delayed extreme ultraviolet attosecond pulse centered around the Silicon L-edge transition maps the conduction band population and thus probes the unfolding electronic dynamics with sub femtosecond resolution. While the induced changes in SiO2 appear only in the presence of the strong light field, the experiment on silicon measures a permanent population transfer into the conduction band triggered by the electric field of light as well as ultrafast renormalization of the band structure.
Original language | English |
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Title of host publication | APS Meeting Abstracts |
Pages | Y42.003 |
Publication status | Published - Mar 2014 |
Externally published | Yes |
Event | APS March Meeting - Denver, United States Duration: 3 Mar 2014 → 7 Mar 2014 |
Conference
Conference | APS March Meeting |
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Country/Territory | United States |
City | Denver |
Period | 3/03/14 → 7/03/14 |
Keywords
- Energy transfer
- Fused silica
- Phase shift
- Pump probe spectroscopy
- Refractive index
- Ultrashort pulses
Fields of Expertise
- Advanced Materials Science