Attosecond spectroscopy of band-gap dynamics excited by the electric field of light

M. Schultze, Krupa Ramasesha, Daniel Neumark, Stephen R. Leone

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The basis of modern electronics and information processing is the control of the electric properties of semiconductors with microwave fields. Speeding up electronics requires extending this control to optical frequencies. We apply attosecond solid state spectroscopy to investigate and compare light field induced ultrafast carrier dynamics in a prototypical semiconductor (silicon) and dielectric (SiO2). After excitation by a highly intense few-cycle visible laser pulse, a time-delayed extreme ultraviolet attosecond pulse centered around the Silicon L-edge transition maps the conduction band population and thus probes the unfolding electronic dynamics with sub femtosecond resolution. While the induced changes in SiO2 appear only in the presence of the strong light field, the experiment on silicon measures a permanent population transfer into the conduction band triggered by the electric field of light as well as ultrafast renormalization of the band structure.
Original languageEnglish
Title of host publicationAPS Meeting Abstracts
PagesY42.003
Publication statusPublished - Mar 2014
Externally publishedYes
EventAPS March Meeting - Denver, United States
Duration: 3 Mar 20147 Mar 2014

Conference

ConferenceAPS March Meeting
CountryUnited States
CityDenver
Period3/03/147/03/14

Keywords

  • Energy transfer
  • Fused silica
  • Phase shift
  • Pump probe spectroscopy
  • Refractive index
  • Ultrashort pulses

Fields of Expertise

  • Advanced Materials Science

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  • Cite this

    Schultze, M., Ramasesha, K., Neumark, D., & Leone, S. R. (2014). Attosecond spectroscopy of band-gap dynamics excited by the electric field of light. In APS Meeting Abstracts (pp. Y42.003)