Attosecond spectroscopy of band-gap dynamics excited by the electric field of light

M. Schultze, Krupa Ramasesha, Daniel Neumark, Stephen R. Leone

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

The basis of modern electronics and information processing is the control of the electric properties of semiconductors with microwave fields. Speeding up electronics requires extending this control to optical frequencies. We apply attosecond solid state spectroscopy to investigate and compare light field induced ultrafast carrier dynamics in a prototypical semiconductor (silicon) and dielectric (SiO2). After excitation by a highly intense few-cycle visible laser pulse, a time-delayed extreme ultraviolet attosecond pulse centered around the Silicon L-edge transition maps the conduction band population and thus probes the unfolding electronic dynamics with sub femtosecond resolution. While the induced changes in SiO2 appear only in the presence of the strong light field, the experiment on silicon measures a permanent population transfer into the conduction band triggered by the electric field of light as well as ultrafast renormalization of the band structure.
Original languageEnglish
Title of host publicationAPS Meeting Abstracts
PagesY42.003
Publication statusPublished - Mar 2014
Externally publishedYes
EventAPS March Meeting - Denver, United States
Duration: 3 Mar 20147 Mar 2014

Conference

ConferenceAPS March Meeting
CountryUnited States
CityDenver
Period3/03/147/03/14

Fingerprint

electric fields
conduction bands
silicon
electronics
spectroscopy
pulses
solid state
microwaves
cycles
probes
excitation
lasers

Keywords

  • Energy transfer
  • Fused silica
  • Phase shift
  • Pump probe spectroscopy
  • Refractive index
  • Ultrashort pulses

Fields of Expertise

  • Advanced Materials Science

Cite this

Schultze, M., Ramasesha, K., Neumark, D., & Leone, S. R. (2014). Attosecond spectroscopy of band-gap dynamics excited by the electric field of light. In APS Meeting Abstracts (pp. Y42.003)

Attosecond spectroscopy of band-gap dynamics excited by the electric field of light. / Schultze, M.; Ramasesha, Krupa; Neumark, Daniel; Leone, Stephen R.

APS Meeting Abstracts. 2014. p. Y42.003.

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Schultze, M, Ramasesha, K, Neumark, D & Leone, SR 2014, Attosecond spectroscopy of band-gap dynamics excited by the electric field of light. in APS Meeting Abstracts. pp. Y42.003, APS March Meeting, Denver, United States, 3/03/14.
Schultze M, Ramasesha K, Neumark D, Leone SR. Attosecond spectroscopy of band-gap dynamics excited by the electric field of light. In APS Meeting Abstracts. 2014. p. Y42.003
Schultze, M. ; Ramasesha, Krupa ; Neumark, Daniel ; Leone, Stephen R. / Attosecond spectroscopy of band-gap dynamics excited by the electric field of light. APS Meeting Abstracts. 2014. pp. Y42.003
@inproceedings{4721ac3a4ba942caa6a800ef9d8625a4,
title = "Attosecond spectroscopy of band-gap dynamics excited by the electric field of light",
abstract = "The basis of modern electronics and information processing is the control of the electric properties of semiconductors with microwave fields. Speeding up electronics requires extending this control to optical frequencies. We apply attosecond solid state spectroscopy to investigate and compare light field induced ultrafast carrier dynamics in a prototypical semiconductor (silicon) and dielectric (SiO2). After excitation by a highly intense few-cycle visible laser pulse, a time-delayed extreme ultraviolet attosecond pulse centered around the Silicon L-edge transition maps the conduction band population and thus probes the unfolding electronic dynamics with sub femtosecond resolution. While the induced changes in SiO2 appear only in the presence of the strong light field, the experiment on silicon measures a permanent population transfer into the conduction band triggered by the electric field of light as well as ultrafast renormalization of the band structure.",
keywords = "Energy transfer, Fused silica, Phase shift, Pump probe spectroscopy, Refractive index, Ultrashort pulses",
author = "M. Schultze and Krupa Ramasesha and Daniel Neumark and Leone, {Stephen R.}",
year = "2014",
month = "3",
language = "English",
pages = "Y42.003",
booktitle = "APS Meeting Abstracts",

}

TY - GEN

T1 - Attosecond spectroscopy of band-gap dynamics excited by the electric field of light

AU - Schultze, M.

AU - Ramasesha, Krupa

AU - Neumark, Daniel

AU - Leone, Stephen R.

PY - 2014/3

Y1 - 2014/3

N2 - The basis of modern electronics and information processing is the control of the electric properties of semiconductors with microwave fields. Speeding up electronics requires extending this control to optical frequencies. We apply attosecond solid state spectroscopy to investigate and compare light field induced ultrafast carrier dynamics in a prototypical semiconductor (silicon) and dielectric (SiO2). After excitation by a highly intense few-cycle visible laser pulse, a time-delayed extreme ultraviolet attosecond pulse centered around the Silicon L-edge transition maps the conduction band population and thus probes the unfolding electronic dynamics with sub femtosecond resolution. While the induced changes in SiO2 appear only in the presence of the strong light field, the experiment on silicon measures a permanent population transfer into the conduction band triggered by the electric field of light as well as ultrafast renormalization of the band structure.

AB - The basis of modern electronics and information processing is the control of the electric properties of semiconductors with microwave fields. Speeding up electronics requires extending this control to optical frequencies. We apply attosecond solid state spectroscopy to investigate and compare light field induced ultrafast carrier dynamics in a prototypical semiconductor (silicon) and dielectric (SiO2). After excitation by a highly intense few-cycle visible laser pulse, a time-delayed extreme ultraviolet attosecond pulse centered around the Silicon L-edge transition maps the conduction band population and thus probes the unfolding electronic dynamics with sub femtosecond resolution. While the induced changes in SiO2 appear only in the presence of the strong light field, the experiment on silicon measures a permanent population transfer into the conduction band triggered by the electric field of light as well as ultrafast renormalization of the band structure.

KW - Energy transfer

KW - Fused silica

KW - Phase shift

KW - Pump probe spectroscopy

KW - Refractive index

KW - Ultrashort pulses

M3 - Conference contribution

SP - Y42.003

BT - APS Meeting Abstracts

ER -