Analysis of tilting load-lines in AlGaN/GaN broadband uniform distributed amplifiers

Malte Coers, Wolfgang Bösch

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

This paper presents a general analysis of tilting load-lines in uniform distributed power amplifiers (UDPA). By means of an ideal equivalent circuit, the dependency of the load-line behavior of the first transistor on design parameters is examined. A DC-15 GHz UDPA designed in a 0.25 µm AlGaN/GaN technology is employed to verify the undertaken theoretical analysis by large-signal simulation and thermal IR-imaging results. The theoretical analysis shows that the two most effective remedies are transistor tapering and drain-line tapering to maintain the first transistor in the safe operating region. Nevertheless, in the presented AlGaN/GaN UDPA design power absorption by the first transistor at certain frequencies could not be suppressed by drain-line tapering due to design specific constraints.

Original languageEnglish
Title of host publication8th German Microwave Conference, GeMiC 2014
PublisherVDE-Verlag GmbH, Berlin, Offenbach
ISBN (Electronic)9783800735853
Publication statusPublished - 1 Jan 2019
Event8th German Microwave Conference, GeMiC 2014 - Aachen, Germany
Duration: 10 Mar 201412 Mar 2014

Publication series

Name8th German Microwave Conference, GeMiC 2014

Conference

Conference8th German Microwave Conference, GeMiC 2014
CountryGermany
CityAachen
Period10/03/1412/03/14

Fingerprint

Transistors
Power amplifiers
Infrared imaging
Equivalent circuits

Keywords

  • AlGaN/GaN
  • Distributed power amplifier
  • Load-line analysis
  • MMIC
  • Traveling-wave-amplifier
  • TWA
  • UDPA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Coers, M., & Bösch, W. (2019). Analysis of tilting load-lines in AlGaN/GaN broadband uniform distributed amplifiers. In 8th German Microwave Conference, GeMiC 2014 (8th German Microwave Conference, GeMiC 2014). VDE-Verlag GmbH, Berlin, Offenbach.

Analysis of tilting load-lines in AlGaN/GaN broadband uniform distributed amplifiers. / Coers, Malte; Bösch, Wolfgang.

8th German Microwave Conference, GeMiC 2014. VDE-Verlag GmbH, Berlin, Offenbach, 2019. (8th German Microwave Conference, GeMiC 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Coers, M & Bösch, W 2019, Analysis of tilting load-lines in AlGaN/GaN broadband uniform distributed amplifiers. in 8th German Microwave Conference, GeMiC 2014. 8th German Microwave Conference, GeMiC 2014, VDE-Verlag GmbH, Berlin, Offenbach, 8th German Microwave Conference, GeMiC 2014, Aachen, Germany, 10/03/14.
Coers M, Bösch W. Analysis of tilting load-lines in AlGaN/GaN broadband uniform distributed amplifiers. In 8th German Microwave Conference, GeMiC 2014. VDE-Verlag GmbH, Berlin, Offenbach. 2019. (8th German Microwave Conference, GeMiC 2014).
Coers, Malte ; Bösch, Wolfgang. / Analysis of tilting load-lines in AlGaN/GaN broadband uniform distributed amplifiers. 8th German Microwave Conference, GeMiC 2014. VDE-Verlag GmbH, Berlin, Offenbach, 2019. (8th German Microwave Conference, GeMiC 2014).
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AB - This paper presents a general analysis of tilting load-lines in uniform distributed power amplifiers (UDPA). By means of an ideal equivalent circuit, the dependency of the load-line behavior of the first transistor on design parameters is examined. A DC-15 GHz UDPA designed in a 0.25 µm AlGaN/GaN technology is employed to verify the undertaken theoretical analysis by large-signal simulation and thermal IR-imaging results. The theoretical analysis shows that the two most effective remedies are transistor tapering and drain-line tapering to maintain the first transistor in the safe operating region. Nevertheless, in the presented AlGaN/GaN UDPA design power absorption by the first transistor at certain frequencies could not be suppressed by drain-line tapering due to design specific constraints.

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