@inproceedings{b10b4ed1a21e49b2a36199ff309cefe2,
title = "An on-chip detector of transient stress events",
abstract = "Testing and debugging of electrostatic discharge (ESD) or electrical fast transient (EFT) issues in modern electronic systems can be challenging. The following paper describes the design of an on-chip circuit which detects and stores the occurrence of a fast transient stress event at the ESD protection structures in an I/O pad. Measurements and simulations of a test circuit in 90 nm technology show it can accurately detect and record the presence of a transient stress event with a peak current as low as 0.9 A or duration as short as 1 ns and that the detector works well across typical temperature and process variations. The small size of the detector will allow it to be used effectively even in low-cost commercial ICs.",
keywords = "Electrical fast transient (EFT), Electrostatic discharge (ESD), ESD detectors, On-chip measurements, System level ESD",
author = "A. Patnaik and M. Suchak and R. Seva and K. Pamidimukkala and D. Pommerenke and G. Edgington and R. Moseley and J. Feddeler and M. Stockinger and D. Beetner",
year = "2017",
month = oct,
day = "20",
doi = "10.1109/ISEMC.2017.8077857",
language = "English",
series = "IEEE International Symposium on Electromagnetic Compatibility",
publisher = "Institute of Electrical and Electronics Engineers",
pages = "146--151",
booktitle = "2017 IEEE International Symposium on Electromagnetic Compatibility, Signal and Power Integrity, EMCSI 2017 - Proceedings",
address = "United States",
note = "2017 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity : EMCSI 2017 ; Conference date: 07-08-2017 Through 11-08-2017",
}