An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

Andrea Kraxner, Frederic Roger, Evelin Fisslthaler, Bernd Löffler, Rainer Minixhofer, Martin Faccinelli, Peter Hadley

Research output: Contribution to journalArticleResearch

Abstract

A 3-D electron-beam-induced current (EBIC) model was implemented in technology computer aided design simulations. The model uses a carefully designed charge carrier generation profile that describes how an electron beam induces charge carriers in a semiconducting device and then drift-diffusion equations are solved to determine the resulting current. The simulation provides a map of the EBIC signal, which can be compared with experimental 2-D profiles. This comparison can be used to fit parameters such as the surface recombination rate which is otherwise difficult to fit in completed devices. Additional experimental data for these fits are obtained by performing the experiments at different electron beam energies and thereby generating carriers at different depths in the sample. The experiments were performed on cross sections of silicon photodiodes with varying surface preparations. A strong influence of the surface preparation method on the charge carrier diffusion was observed.
Original languageEnglish
Pages (from-to)4395-4401
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number11
DOIs
Publication statusPublished - 2016

ASJC Scopus subject areas

  • Materials Science(all)

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

Cite this

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices. / Kraxner, Andrea; Roger, Frederic; Fisslthaler, Evelin; Löffler, Bernd; Minixhofer, Rainer; Faccinelli, Martin; Hadley, Peter.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 11, 2016, p. 4395-4401.

Research output: Contribution to journalArticleResearch

Kraxner, Andrea ; Roger, Frederic ; Fisslthaler, Evelin ; Löffler, Bernd ; Minixhofer, Rainer ; Faccinelli, Martin ; Hadley, Peter. / An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices. In: IEEE Transactions on Electron Devices. 2016 ; Vol. 63, No. 11. pp. 4395-4401.
@article{d36ec3bff1a94a35a45eef84660e4cfd,
title = "An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices",
abstract = "A 3-D electron-beam-induced current (EBIC) model was implemented in technology computer aided design simulations. The model uses a carefully designed charge carrier generation profile that describes how an electron beam induces charge carriers in a semiconducting device and then drift-diffusion equations are solved to determine the resulting current. The simulation provides a map of the EBIC signal, which can be compared with experimental 2-D profiles. This comparison can be used to fit parameters such as the surface recombination rate which is otherwise difficult to fit in completed devices. Additional experimental data for these fits are obtained by performing the experiments at different electron beam energies and thereby generating carriers at different depths in the sample. The experiments were performed on cross sections of silicon photodiodes with varying surface preparations. A strong influence of the surface preparation method on the charge carrier diffusion was observed.",
author = "Andrea Kraxner and Frederic Roger and Evelin Fisslthaler and Bernd L{\"o}ffler and Rainer Minixhofer and Martin Faccinelli and Peter Hadley",
year = "2016",
doi = "10.1109/TED.2016.2606703",
language = "English",
volume = "63",
pages = "4395--4401",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers",
number = "11",

}

TY - JOUR

T1 - An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

AU - Kraxner, Andrea

AU - Roger, Frederic

AU - Fisslthaler, Evelin

AU - Löffler, Bernd

AU - Minixhofer, Rainer

AU - Faccinelli, Martin

AU - Hadley, Peter

PY - 2016

Y1 - 2016

N2 - A 3-D electron-beam-induced current (EBIC) model was implemented in technology computer aided design simulations. The model uses a carefully designed charge carrier generation profile that describes how an electron beam induces charge carriers in a semiconducting device and then drift-diffusion equations are solved to determine the resulting current. The simulation provides a map of the EBIC signal, which can be compared with experimental 2-D profiles. This comparison can be used to fit parameters such as the surface recombination rate which is otherwise difficult to fit in completed devices. Additional experimental data for these fits are obtained by performing the experiments at different electron beam energies and thereby generating carriers at different depths in the sample. The experiments were performed on cross sections of silicon photodiodes with varying surface preparations. A strong influence of the surface preparation method on the charge carrier diffusion was observed.

AB - A 3-D electron-beam-induced current (EBIC) model was implemented in technology computer aided design simulations. The model uses a carefully designed charge carrier generation profile that describes how an electron beam induces charge carriers in a semiconducting device and then drift-diffusion equations are solved to determine the resulting current. The simulation provides a map of the EBIC signal, which can be compared with experimental 2-D profiles. This comparison can be used to fit parameters such as the surface recombination rate which is otherwise difficult to fit in completed devices. Additional experimental data for these fits are obtained by performing the experiments at different electron beam energies and thereby generating carriers at different depths in the sample. The experiments were performed on cross sections of silicon photodiodes with varying surface preparations. A strong influence of the surface preparation method on the charge carrier diffusion was observed.

UR - http://ieeexplore.ieee.org/document/7572135/?arnumber=7572135

U2 - 10.1109/TED.2016.2606703

DO - 10.1109/TED.2016.2606703

M3 - Article

VL - 63

SP - 4395

EP - 4401

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -