An approach to characterize behavior of multiport ICs under ESD stress

Omid Hoseini Izadi, Kathleen Muhonen, Nathaniel Peachey, David Pommerenke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019
PublisherESD Association
ISBN (Electronic)9781585373116
DOIs
Publication statusPublished - 1 Sep 2019
Externally publishedYes
Event41st Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2019 - Riverside, United States
Duration: 15 Sep 201920 Sep 2019

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume2019-September
ISSN (Print)0739-5159

Conference

Conference41st Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2019
CountryUnited States
CityRiverside
Period15/09/1920/09/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Izadi, O. H., Muhonen, K., Peachey, N., & Pommerenke, D. (2019). An approach to characterize behavior of multiport ICs under ESD stress. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2019-September). ESD Association. https://doi.org/10.23919/EOS/ESD.2019.8870004