An approach to characterize behavior of multiport ICs under ESD stress

Omid Hoseini Izadi; Kathleen Muhonen; Nathaniel Peachey; David Pommerenke

doi:10.23919/EOS/ESD.2019.8870004

An approach to characterize behavior of multiport ICs under ESD stress

Omid Hoseini Izadi, Kathleen Muhonen, Nathaniel Peachey, David Pommerenke

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Abstract

ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.

Original language	English
Title of host publication	Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019
Publisher	ESD Association
ISBN (Electronic)	9781585373116
DOIs	https://doi.org/10.23919/EOS/ESD.2019.8870004
Publication status	Published - 1 Sept 2019
Externally published	Yes
Event	41st Annual Electrical Overstress/Electrostatic Discharge Symposium: EOS/ESD 2019 - Riverside, United States Duration: 15 Sept 2019 → 20 Sept 2019

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume	2019-September
ISSN (Print)	0739-5159

Conference

Conference	41st Annual Electrical Overstress/Electrostatic Discharge Symposium
Country/Territory	United States
City	Riverside
Period	15/09/19 → 20/09/19

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.23919/EOS/ESD.2019.8870004

Cite this

Izadi, O. H., Muhonen, K., Peachey, N., & Pommerenke, D. (2019). An approach to characterize behavior of multiport ICs under ESD stress. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2019-September). ESD Association. https://doi.org/10.23919/EOS/ESD.2019.8870004

An approach to characterize behavior of multiport ICs under ESD stress. / Izadi, Omid Hoseini; Muhonen, Kathleen; Peachey, Nathaniel et al.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019. ESD Association, 2019. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

Izadi, OH, Muhonen, K, Peachey, N & Pommerenke, D 2019, An approach to characterize behavior of multiport ICs under ESD stress. in Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2019, EOS/ESD 2019. Electrical Overstress/Electrostatic Discharge Symposium Proceedings, vol. 2019-September, ESD Association, 41st Annual Electrical Overstress/Electrostatic Discharge Symposium, Riverside, United States, 15/09/19. https://doi.org/10.23919/EOS/ESD.2019.8870004

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title = "An approach to characterize behavior of multiport ICs under ESD stress",

abstract = "ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.",

author = "Izadi, {Omid Hoseini} and Kathleen Muhonen and Nathaniel Peachey and David Pommerenke",

year = "2019",

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doi = "10.23919/EOS/ESD.2019.8870004",

language = "English",

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AB - ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.

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An approach to characterize behavior of multiport ICs under ESD stress

Abstract

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Conference

ASJC Scopus subject areas

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