A Schrödinger-Poisson-Boltzmann system applied to the charge carrier transport in strained silicon

Gregor Toschkoff, Gerald Ossig, Peter Lichtenberger, Karin Zojer, Ferdinand Schürrer

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)239-246
JournalIl nuovo cimento della Società Italiana di Fisica / C
Volume33 C
Issue number1
DOIs
Publication statusPublished - 2010

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Theoretical

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