A Schrödinger-Poisson-Boltzmann system applied to the charge carrier transport in strained silicon

Gregor Toschkoff, Gerald Ossig, Peter Lichtenberger, Karin Zojer, Ferdinand Schürrer

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)239-246
JournalIl nuovo cimento della Società Italiana di Fisica / C
Volume33 C
Issue number1
DOIs
Publication statusPublished - 2010

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Theoretical

Cite this

A Schrödinger-Poisson-Boltzmann system applied to the charge carrier transport in strained silicon. / Toschkoff, Gregor; Ossig, Gerald; Lichtenberger, Peter; Zojer, Karin; Schürrer, Ferdinand.

In: Il nuovo cimento della Società Italiana di Fisica / C, Vol. 33 C, No. 1, 2010, p. 239-246.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Schürrer, Ferdinand

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