A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions

D. Büchl*, W. Kemmetmüller, T. Glück, B. Deutschmann, A. Kugi

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Hard switching of semiconductors is the main source of conducted electromagnetic emissions (EME) in pulse-width modulation (PWM) driven power inverters. The requirements on the electromagnetic compatibility grow with the increasing number of installed electric motor drives and inductive power converters. An accurate prediction of the conducted EME requires a model which considers the switching transition of the power semiconductors and the parasitic elements. This typically leads to complex SPICE models, which are hardly suitable for fast dynamic simulations and model-based controller design. This paper presents a compact mathematical model of a low voltage half-bridge inverter, which is based on large-signal models for the individual components and allows for the fast simulation of the conducted EME and switching losses. The high accuracy of the proposed mathematical model is demonstrated by measurement results. In particular, it is shown that the model is able to accurately predict the conducted electromagnetic emissions up to 100 MHz.

Original languageEnglish
Pages (from-to)242-260
Number of pages19
JournalMathematical and computer modelling of dynamical systems
Volume25
Issue number3
DOIs
Publication statusPublished - 4 May 2019

Keywords

  • Conducted electromagnetic emission (EME)
  • electromagnetic compatibility (EMC)
  • metal-oxide-semiconductor field-effect transistor (MOSFET)
  • physics based modeling
  • power inverter

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Software
  • Modelling and Simulation
  • Computer Science Applications
  • Applied Mathematics

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