A chemical study of plasma-deposited organosilicon thin films as low-k dielectrics

Anna M. Coclite; Antonella Milella; Fabio Palumbo; Francesco Fracassi; Riccardo D'Agostino

doi:10.1002/ppap.200800211

A chemical study of plasma-deposited organosilicon thin films as low-k dielectrics

Anna M. Coclite, Antonella Milella^*, Fabio Palumbo, Francesco Fracassi, Riccardo D'Agostino

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited -thickness loss of 6% upon thermal annealing at 400 °C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (15O0C) during deposition ensured the best balance between very low permittivities and good thermal stability.

Original language	English
Pages (from-to)	512-520
Number of pages	9
Journal	Plasma Processes and Polymers
Volume	6
Issue number	8
DOIs	https://doi.org/10.1002/ppap.200800211
Publication status	Published - 15 Aug 2009
Externally published	Yes

Keywords

Dielectric constant
Methylene bridges
Organosilicon films
Siloxane bridges
Thermal stability

ASJC Scopus subject areas

Condensed Matter Physics
Polymers and Plastics

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10.1002/ppap.200800211

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title = "A chemical study of plasma-deposited organosilicon thin films as low-k dielectrics",

abstract = "Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited -thickness loss of 6% upon thermal annealing at 400 °C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (15O0C) during deposition ensured the best balance between very low permittivities and good thermal stability.",

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author = "Coclite, {Anna M.} and Antonella Milella and Fabio Palumbo and Francesco Fracassi and Riccardo D'Agostino",

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AU - Coclite, Anna M.

AU - Milella, Antonella

AU - Palumbo, Fabio

AU - Fracassi, Francesco

AU - D'Agostino, Riccardo

PY - 2009/8/15

Y1 - 2009/8/15

N2 - Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited -thickness loss of 6% upon thermal annealing at 400 °C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (15O0C) during deposition ensured the best balance between very low permittivities and good thermal stability.

AB - Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited -thickness loss of 6% upon thermal annealing at 400 °C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (15O0C) during deposition ensured the best balance between very low permittivities and good thermal stability.

KW - Dielectric constant

KW - Methylene bridges

KW - Organosilicon films

KW - Siloxane bridges

KW - Thermal stability

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DO - 10.1002/ppap.200800211

M3 - Article

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JO - Plasma Processes and Polymers

JF - Plasma Processes and Polymers

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ER -

A chemical study of plasma-deposited organosilicon thin films as low-k dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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