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  • Peter Hadley
2019

Manipulating drug release from tridimensional porous substrates coated by initiated chemical vapor deposition

Ghasemi-Mobarakeh, L., Werzer, O., Keimel, R., Kolahreez, D., Hadley, P. & Coclite, A. M., 2019, In : Journal of applied polymer science. 136, 33, 47858.

Research output: Contribution to journalArticleResearchpeer-review

2018

Characterization of Moisture Uptake in Microelectronics Packaging Materials

Huber, F., Etschmaier, H., Wolfberger, A., Singulani, A. & Hadley, P., 26 Nov 2018, 2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings. Institute of Electrical and Electronics Engineers, 8546489

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

Gruber, G., Cottom, J., Meszaros, R., Koch, M., Pobegen, G., Aichinger, T., Peters, D. & Hadley, P., 28 Apr 2018, In : Journal of Applied Physics. 123, 16, 161514.

Research output: Contribution to journalArticleResearchpeer-review

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO2 Interface

Gruber, G., Gspan, C., Fisslthaler, E., Dienstleder, M., Pobegen, G., Aichinger, T., Meszaros, R., Grogger, W. & Hadley, P., 2018, In : Advanced energy materials. 5, p. 1800022 7 p.

Research output: Contribution to journalArticleResearchpeer-review

Open Access
2016

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

Kraxner, A., Roger, F., Fisslthaler, E., Löffler, B., Minixhofer, R., Faccinelli, M. & Hadley, P., 2016, In : IEEE Transactions on Electron Devices. 63, 11, p. 4395-4401 6 p.

Research output: Contribution to journalArticleResearch

Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance

Gruber, G., Aichinger, T., Pobegen, G., Peters, D., Koch, M. & Hadley, P., 2016, Silicon Carbide and Related Materials 2015. Trans Tech Publications Ltd., Vol. 858. p. 643-646 4 p. (Materials Science Forum; vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

MOSFET Aging Measurements and Hot-Electron Degradation Models

Schiffmann, A., Oct 2016, (Unpublished) 149 p.

Research output: ThesisDiploma ThesisResearch

Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

Cottom, J., Gruber, G., Hadley, P., Koch, M., Pobegen, G., Aichinger, T. & Shluger, A., 14 May 2016, In : Journal of Applied Physics. 119, 18, 181507.

Research output: Contribution to journalArticleResearchpeer-review

Simulation of the proton implantation process in silicon

Faccinelli, M., Jelinek, M., Wuebben, T., Laven, J. G., Schulze, H-J. & Hadley, P., 19 Jul 2016, In : Physica status solidi / C. 6 p.

Research output: Contribution to journalArticleResearchpeer-review