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  • Peter Hadley
2016

Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance

Gruber, G., Aichinger, T., Pobegen, G., Peters, D., Koch, M. & Hadley, P., 2016, Silicon Carbide and Related Materials 2015. Trans Tech Publications Ltd., Vol. 858. p. 643-646 4 p. (Materials Science Forum; vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

2019

Manipulating drug release from tridimensional porous substrates coated by initiated chemical vapor deposition

Ghasemi-Mobarakeh, L., Werzer, O., Keimel, R., Kolahreez, D., Hadley, P. & Coclite, A. M., 2019, In : Journal of applied polymer science. 136, 33, 47858.

Research output: Contribution to journalArticleResearchpeer-review

2018

Characterization of Moisture Uptake in Microelectronics Packaging Materials

Huber, F., Etschmaier, H., Wolfberger, A., Singulani, A. & Hadley, P., 26 Nov 2018, 2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings. Institute of Electrical and Electronics Engineers, 8546489

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

2016

Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

Cottom, J., Gruber, G., Hadley, P., Koch, M., Pobegen, G., Aichinger, T. & Shluger, A., 14 May 2016, In : Journal of Applied Physics. 119, 18, 181507.

Research output: Contribution to journalArticleResearchpeer-review

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

Kraxner, A., Roger, F., Fisslthaler, E., Löffler, B., Minixhofer, R., Faccinelli, M. & Hadley, P., 2016, In : IEEE Transactions on Electron Devices. 63, 11, p. 4395-4401 6 p.

Research output: Contribution to journalArticleResearch

Simulation of the proton implantation process in silicon

Faccinelli, M., Jelinek, M., Wuebben, T., Laven, J. G., Schulze, H-J. & Hadley, P., 19 Jul 2016, In : Physica status solidi / C. 6 p.

Research output: Contribution to journalArticleResearchpeer-review

MOSFET Aging Measurements and Hot-Electron Degradation Models

Schiffmann, A., Oct 2016, (Unpublished) 149 p.

Research output: ThesisDiploma ThesisResearch

2018

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

Gruber, G., Cottom, J., Meszaros, R., Koch, M., Pobegen, G., Aichinger, T., Peters, D. & Hadley, P., 28 Apr 2018, In : Journal of Applied Physics. 123, 16, 161514.

Research output: Contribution to journalArticleResearchpeer-review

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO2 Interface

Gruber, G., Gspan, C., Fisslthaler, E., Dienstleder, M., Pobegen, G., Aichinger, T., Meszaros, R., Grogger, W. & Hadley, P., 2018, In : Advanced energy materials. 5, p. 1800022 7 p.

Research output: Contribution to journalArticleResearchpeer-review

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