The project proposal “UltimateGaN” aims at achieving significant improvements in terms of the CO2 footprint of the digitalisation. This will be done by enabling the next generation of Galliumnitride (GaN)-technologies and packages for the European Electronic Components and Systems industry.
Several FP7 and H2020 projects, among them the ECSEL pilot-line project “PowerBase” are the basis for the availability of the first generation of European GaN-devices. But these projects also made clearly evident, that the challenges of the GaN technologies have been heavily underestimated. This results in a still very high potential of the GaN material system that will be addressed by a “Research and Innovation Action”. Thus, UltimateGaN is positioned as a RIA and includes the entire value chain (technology, packaging, reliability, application) while consistently focusing on the three main pillars: (1) Explore the path toward vertical power GaN devices and related technologies; (2) Explore the limits toward best in class power density and efficiency enabled by the newest lateral GaN Technologies; (3) Bringing GaN on Silicon radiofrequency (RF) performance close to GaN on Silicon Carbide thus enabling affordable 5G. These main pillars are accompanied by the following objectives: (4) Overcome the packaging limits for high performance GaN power products; (5) Most advanced reliability and defect understanding for novel GaN device concepts; (6) Safeguard European leadership in high performance power and RF applications to master the grand societal challenges. The investigation of all these pillars will enable a beyond state-of-the-art GaN technology that follows a vertical, supply chain oriented approach. The resulting affordable GaN-devices will enable a broad spectrum of innovative and energy efficient applications that foster the digitalisation attempts.