The objective of the proposed action is to prepare a field effect transistor (FET) device based on heterostructures of graphene layers with a transition metal dichalcogenides (TMDC). The synthesis of monolayer and few-layer of graphene and MoS2 will be done by Aerosol Jet® Printing and PVD methods (magnetron sputtering). Layer number, thickness of the nano-crystalline graphite, structure and chemical composition of the graphene/MoS2 heterostructure will be characterized by Scanning Tunneling Electron Microscopy (STEM), ellipsometry, Raman Spectroscopy, X-ray Photoelectron Microscopy (XPS), ex-situ and in-situ X-Ray Reflectivity (XRR) and Atomic Force Microscopy (AFM). Electrical behaviour and transmittance of the FET graphene/MoS2 device will be measured by a parameter analyser and transmitted light spectroscopy. The FET device should reach an on/off current ration >104 and a field effect mobility > 1 cm2/V•s. This should be achieved by selection of the optimal production process, material combinations, processing parameter and surface treatments. It could be applied in large area fabrication of high-performance, flexible and low-cost printed electronics, which are planned to be developed in joint follow-up actions involving research organisations and companies from Austria and neighbouring countries.
|Effective start/end date||1/02/15 → 31/01/16|
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