Thin vanadium nitride layers which were prepared on Silicon wafers by means of rapid thermal processing were analyzed by analytical electron microscopy. TEM-cross-section specimens were prepared by cross-sectional ion-milling and EELS elemental maps and EELS line scans were measured perpendicular to the surface. It was possible to identify different compounds (VN, V2N and VOxNy)ocurring in sublayers and to derive the quantitative chemical composition of the layers. The results are compared with SIMS measurements.
|Effective start/end date||1/05/99 → 31/12/01|
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