Defects in Semiconductors studied by Positron Annihilation

Project: Research project

Description

The aim of this project is the study of atomic defects in semiconductors by positron annihilation spectroscopy. The thermal behaviour of grown in and introduced defects by electron or proton irradiation is observed by measuring the positron lifetime and the doppler broadening of the annihilation radiation.
StatusFinished
Effective start/end date1/01/9831/01/13