During the last couple of years, transmission electron microscopy has gained more and more importance in semiconductor and magnetic multilayer characterization since device dimensions have been continuously decreasing. Simultaneously, energy-filtering TEM has established itself as a powerful analytical technique to explore the chemical composition of semiconducting materials on a nanometer range. EFTEM elemental mapping and EELS-spectrometry are used to identify chemical defects in semiconductor devices which have been prepared by cross-sectional ion-milling. Furthermore, we investigate the crystallography and chemistry of thin layers in semiconductor devices and the interfaces between these layers.
|Effective start/end date||1/01/99 → 31/12/05|