1991 …2019
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Personal profile

Keywords

  • 103009 Solid state physics

Fingerprint Dive into the research topics where Peter Hadley is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

field effect transistors Physics & Astronomy
Field effect transistors Engineering & Materials Science
Organic field effect transistors Chemical Compounds
Single electron transistors Engineering & Materials Science
single electron transistors Physics & Astronomy
Silicon Chemical Compounds
Single crystals Chemical Compounds
magnetic resonance Physics & Astronomy

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Research Output 1991 2019

Manipulating drug release from tridimensional porous substrates coated by initiated chemical vapor deposition

Ghasemi-Mobarakeh, L., Werzer, O., Keimel, R., Kolahreez, D., Hadley, P. & Coclite, A. M., 2019, In : Journal of applied polymer science. 136, 33, 47858.

Research output: Contribution to journalArticleResearchpeer-review

Chemical vapor deposition
Substrates
Pharmaceutical Preparations
Acids
Coatings

Characterization of Moisture Uptake in Microelectronics Packaging Materials

Huber, F., Etschmaier, H., Wolfberger, A., Singulani, A. & Hadley, P., 26 Nov 2018, 2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings. Institute of Electrical and Electronics Engineers, 8546489

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Packaging materials
Microelectronics
Moisture
Epoxy Compounds
Free volume

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

Gruber, G., Cottom, J., Meszaros, R., Koch, M., Pobegen, G., Aichinger, T., Peters, D. & Hadley, P., 28 Apr 2018, In : Journal of Applied Physics. 123, 16, 161514.

Research output: Contribution to journalArticleResearchpeer-review

magnetic resonance
metal oxide semiconductors
field effect transistors
carbon
defects

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO2 Interface

Gruber, G., Gspan, C., Fisslthaler, E., Dienstleder, M., Pobegen, G., Aichinger, T., Meszaros, R., Grogger, W. & Hadley, P., 2018, In : Advanced energy materials. 5, p. 1800022 7 p.

Research output: Contribution to journalArticleResearchpeer-review

Open Access

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

Kraxner, A., Roger, F., Fisslthaler, E., Löffler, B., Minixhofer, R., Faccinelli, M. & Hadley, P., 2016, In : IEEE Transactions on Electron Devices. 63, 11, p. 4395-4401 6 p.

Research output: Contribution to journalArticleResearch

Activities 2006 2013

Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling

Peter Hadley (Agent)
5 Dec 2013

Activity: Examination or supervisionExternal examination

Beyond CMOS, Leuven (Belgien)

Peter Hadley (Participant)
1 Sep 2011

Activity: Participation in or organisation ofFestival or exhibition (Participation in/Organisation of)

Beyond CMOS - EURODOTS Workshop

Peter Hadley (Speaker)
31 Aug 2011

Activity: Talk or presentationInvited talkScience to science

Habilitationskommission Chioncel, 5150 Institut für Theoretische Physik - Computational Physics (External organisation)

Peter Hadley (Member)
1 Jun 201020 Oct 2010

Activity: MembershipMembership of examination board

Projects 2013 2016