DescriptionThe ability to grow inorganic thin films with highly controllable structural and optical properties at low substrate temperature enables the manufacturing of functional devices on thermo-sensitive substrates without the need of material post-processing.
In this study, we report on the growth of zinc oxide films by direct plasma-enhanced atomic layer deposition (PE-ALD) at near room temperature. Diethyl zinc and oxygen plasma were used as the precursor and co-reactant, respectively.
The process was optimized with respect to the precursor and co-reactant dosing as well as to the purging times, which ultimately resulted in saturated ALD growth. The so-obtained films exhibit a polycrystalline pattern with a (100) texture and low amount of incorporated carbon.
Furthermore, the possibility to tune crystallite size, refractive index, and bandgap of the films by adapting the plasma radio-frequency power is demonstrated.
|Period||25 Sep 2017|
|Event title||Advanced Materials Day 2017|
|Degree of Recognition||Local|
Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
Research output: Contribution to journal › Article › peer-review