Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature

Description

The ability to grow inorganic thin films with highly controllable structural and optical properties at low substrate temperature enables the manufacturing of functional devices on thermo-sensitive substrates without the need of material post-processing.
In this study, we report on the growth of zinc oxide films by direct plasma-enhanced atomic layer deposition (PE-ALD) at near room temperature. Diethyl zinc and oxygen plasma were used as the precursor and co-reactant, respectively.
The process was optimized with respect to the precursor and co-reactant dosing as well as to the purging times, which ultimately resulted in saturated ALD growth. The so-obtained films exhibit a polycrystalline pattern with a (100) texture and low amount of incorporated carbon.
Furthermore, the possibility to tune crystallite size, refractive index, and bandgap of the films by adapting the plasma radio-frequency power is demonstrated.

Period	25 Sep 2017
Held at	Advanced Materials Day 2017
Event type	Conference
Location	Graz, Austria
Degree of Recognition	Local