| Period | 16 Sept 2018 → 21 Sept 2018 |
|---|---|
| Event type | Conference |
| Location | Gothenburg, SwedenShow on map |
| Degree of Recognition | International |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
- Nuclear and High Energy Physics
- Modelling and Simulation
Related content
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Publications
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Modeling of annular gate MOS transistors
Research output: Contribution to conference › Poster › peer-review
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Low TID effects on MOS transistors
Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review
-
Modeling of annular gate MOS transistors
Research output: Contribution to conference › Paper › peer-review
-
Low TID effects on MOS transistors
Research output: Contribution to conference › Paper › peer-review
-
Modeling of annular gate MOS transistor
Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review
-
Low TID effects on MOS transistors
Research output: Contribution to conference › Poster › peer-review
-
Activities
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Low TID effects on MOS transistors
Activity: Talk or presentation › Poster presentation › Science to science
-
Modeling of annular gate MOS transistors
Activity: Talk or presentation › Poster presentation › Science to science