Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference

Darshan Shetty; Christoph Steffan; Wolfgang Bösch; Jasmin Grosinger

doi:10.1109/ISCAS48785.2022.9937922

Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference

Darshan Shetty^*, Christoph Steffan, Wolfgang Bösch, Jasmin Grosinger

^*Korrespondierende/r Autor/-in für diese Arbeit

Institut für Hochfrequenztechnik (4510)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Abstract

This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

Originalsprache	englisch
Titel	IEEE International Symposium on Circuits and Systems, ISCAS 2022
Herausgeber (Verlag)	Institute of Electrical and Electronics Engineers
Seiten	843-847
Seitenumfang	5
ISBN (elektronisch)	9781665484855
DOIs	https://doi.org/10.1109/ISCAS48785.2022.9937922
Publikationsstatus	Veröffentlicht - 2022
Veranstaltung	2022 IEEE International Symposium on Circuits and Systems: ISCAS 2022 - Austin, USA / Vereinigte Staaten Dauer: 27 Mai 2022 → 1 Juni 2022

Konferenz

Konferenz	2022 IEEE International Symposium on Circuits and Systems
Kurztitel	ISCAS 2022
Land/Gebiet	USA / Vereinigte Staaten
Ort	Austin
Zeitraum	27/05/22 → 1/06/22

ASJC Scopus subject areas

Elektrotechnik und Elektronik

Fields of Expertise

Information, Communication & Computing

UN SDGs

Dieser Output leistet einen Beitrag zu folgendem(n) Ziel(en) für nachhaltige Entwicklung

Zugriff auf Dokument

10.1109/ISCAS48785.2022.9937922

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

Wireless Power Transmission for Sustainable Electronics (WIPE)
Bösch, W., Görtschacher, L. J., Pachler, W., Freidl, P. F., Khan, H. N., Gadringer, M. E., Greiner, P., Gentili, F., Glanzer, C., Grosinger, J., Fischbacher, R. B. & Deutschmann, B.
1/04/13 → 6/08/20
Projekt: Arbeitsgebiet
Radio Frequenz Identifikation (RFID) Technologie
Görtschacher, L. J., Pachler, W., Freidl, P. F., Bösch, W., Gadringer, M. E., Khan, H. N., Greiner, P., Glanzer, C., Grosinger, J., Fischbacher, R. B., Deutschmann, B., Romero Lopera, J. & Shetty, D.
1/04/13 → …
Projekt: Arbeitsgebiet

Dieses zitieren

Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference. / Shetty, Darshan; Steffan, Christoph; Bösch, Wolfgang et al.

IEEE International Symposium on Circuits and Systems, ISCAS 2022. Institute of Electrical and Electronics Engineers, 2022. S. 843-847.

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Shetty, D, Steffan, C, Bösch, W & Grosinger, J 2022, Ultra-Low-Power IoT 30nW 474mV 19 ppm/^°C Voltage Reference and 2 nA 470 ppm/^°C Current Reference. in IEEE International Symposium on Circuits and Systems, ISCAS 2022. Institute of Electrical and Electronics Engineers, S. 843-847, 2022 IEEE International Symposium on Circuits and Systems, Austin, Texas, USA / Vereinigte Staaten, 27/05/22. https://doi.org/10.1109/ISCAS48785.2022.9937922

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title = "Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference",

abstract = "This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.",

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author = "Darshan Shetty and Christoph Steffan and Wolfgang B{\"o}sch and Jasmin Grosinger",

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AU - Grosinger, Jasmin

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N2 - This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

AB - This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

KW - current reference

KW - high-precision

KW - second-order compensation

KW - sub-threshold CMOS design

KW - temperature compensation

KW - ultra-low power

KW - voltage reference

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