Ultra-Low-Power IoT 30nW 474mV 19 ppm/°C Voltage Reference and 2 nA 470 ppm/°C Current Reference

Darshan Shetty*, Christoph Steffan, Wolfgang Bösch, Jasmin Grosinger

*Korrespondierende/r Autor/-in für diese Arbeit

Publikation: Beitrag in Buch/Bericht/KonferenzbandBeitrag in einem KonferenzbandBegutachtung


This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

TitelIEEE International Symposium on Circuits and Systems, ISCAS 2022
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers
ISBN (elektronisch)9781665484855
PublikationsstatusVeröffentlicht - 2022
Veranstaltung2022 IEEE International Symposium on Circuits and Systems: ISCAS 2022 - Austin, USA / Vereinigte Staaten
Dauer: 27 Mai 20221 Juni 2022


Konferenz2022 IEEE International Symposium on Circuits and Systems
KurztitelISCAS 2022
Land/GebietUSA / Vereinigte Staaten

ASJC Scopus subject areas

  • Elektrotechnik und Elektronik

Fields of Expertise

  • Information, Communication & Computing


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