Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Publikation: Beitrag in Buch/Bericht/KonferenzbandBeitrag in einem KonferenzbandForschungBegutachtung

Abstract

Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.
Originalspracheenglisch
Titel2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)
Herausgeber (Verlag)IEEE Publications
Seiten366-369
Seitenumfang4
ISBN (elektronisch)978-1-4673-9494-9
ISBN (Print)978-1-4673-8310-3
DOIs
PublikationsstatusVeröffentlicht - 28 Jul 2016

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MOSFET devices
CMOS
transistors
Radiation
dosage
Transistors
radiation

Schlagwörter

    ASJC Scopus subject areas

    • !!Electrical and Electronic Engineering
    • !!Safety, Risk, Reliability and Quality
    • !!Radiation

    Fields of Expertise

    • Information, Communication & Computing

    Dies zitieren

    Bezhenova, V., & Michalowska-Forsyth, A. M. (2016). Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. in 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC) (S. 366-369). IEEE Publications. https://doi.org/10.1109/APEMC.2016.7522739

    Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. / Bezhenova, Varvara; Michalowska-Forsyth, Alicja Malgorzata.

    2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC). IEEE Publications, 2016. S. 366-369.

    Publikation: Beitrag in Buch/Bericht/KonferenzbandBeitrag in einem KonferenzbandForschungBegutachtung

    Bezhenova, V & Michalowska-Forsyth, AM 2016, Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. in 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC). IEEE Publications, S. 366-369. https://doi.org/10.1109/APEMC.2016.7522739
    Bezhenova V, Michalowska-Forsyth AM. Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. in 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC). IEEE Publications. 2016. S. 366-369 https://doi.org/10.1109/APEMC.2016.7522739
    Bezhenova, Varvara ; Michalowska-Forsyth, Alicja Malgorzata. / Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC). IEEE Publications, 2016. S. 366-369
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    abstract = "Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.",
    keywords = "Logic gates, MOS devices, Transistors, CMOS integrated circuits, ionizing dose effects, RINCE, radiation hard design",
    author = "Varvara Bezhenova and Michalowska-Forsyth, {Alicja Malgorzata}",
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    AB - Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.

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