Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Publikation: KonferenzbeitragPosterForschungBegutachtung

Abstract

Abstract:
Total ionizing dose effects on transistors, fabricated in 0.18 μm CMOS technology are investigated. Radiation induced changes in NMOS and PMOS transistors parameters are discussed. Radiation induced narrow channel effect (RINCE) is demonstrated. Degree of influence of the bias conditions on the radiation response of the transistors in the given CMOS process is shown. Finally, impact of the devices electrical characteristics change on radiation hard design as well as outlook of further investigation activities is discussed.
Originalspracheenglisch
Seiten366-369
Seitenumfang4
PublikationsstatusVeröffentlicht - 28 Jul 2016
VeranstaltungAsia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC) - Shenzhen, China
Dauer: 18 Mai 201621 Mai 2016

Konferenz

KonferenzAsia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC)
LandChina
OrtShenzhen
Zeitraum18/05/1621/05/16

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CMOS
transistors
dosage
radiation

Dies zitieren

Bezhenova, V., & Michalowska-Forsyth, A. M. (2016). Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. 366-369. Postersitzung präsentiert bei Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.

Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. / Bezhenova, Varvara; Michalowska-Forsyth, Alicja Malgorzata.

2016. 366-369 Postersitzung präsentiert bei Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.

Publikation: KonferenzbeitragPosterForschungBegutachtung

Bezhenova V, Michalowska-Forsyth AM. Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. 2016. Postersitzung präsentiert bei Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.
Bezhenova, Varvara ; Michalowska-Forsyth, Alicja Malgorzata. / Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology. Postersitzung präsentiert bei Asia-Pacific International Symposium on Electromagnetic Compatibility & Signal Integrity (APEMC), Shenzhen, China.4 S.
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