The dissolution rates of gibbsite in the presence of chloride, nitrate, silica, sulfate, and citrate in open and closed systems at 20°C

M. Dietzel*, G. Böhme

*Korrespondierende/r Autor/-in für diese Arbeit

Publikation: Beitrag in einer FachzeitschriftArtikelBegutachtung

Abstract

The dissolution of well crystallized gibbsite far at from equilibrium was studied in batch and mixed flow through reactors. The dissolution experiments were carried out between pH 2 and 6 in the presence of 10 mmol L-1 citrate, at pH 2 and 3 in the presence of 10 mmol L-1 chloride, nitrate, and sulfate, and at pH 2 and 3 in the presence of 1.5 mmol L-1 silica at 20°C. The dissolution rate of gibbsite, RAl (mol m-2 s-1), increases in the order of chloride ≈ nitrate < silica < sulfate ≈ citrate. In presence of silica, sulphate, and citrate dissolution is catalysed by the formation of aluminium complexes at the gibbsite surface (pH 2 and 3). From pH 2 to 3 no effect of RAl on hydrogen activity is predicted as singly coordinated surface sites at the edges of the platy gibbsite crystals, [≡AlOH2 +0.5] ≈ [≡AlOH], are almost saturated with protons. However at pH >3 dissolution is slowed by a decrease of [≡AlOH2+0.5]. Gibbsite dissolution rates measured in closed and open systems were identical within the experimental and analytical uncertainty. This observation indicates that gibbsite dissolution is a surface controlled process. If dissolution of gibbsite occurs close to equilibrium RAl values may be predicted by an approximately linear function of ΔGr.

Originalspracheenglisch
Seiten (von - bis)1199-1211
Seitenumfang13
FachzeitschriftGeochimica et Cosmochimica Acta
Jahrgang69
Ausgabenummer5
DOIs
PublikationsstatusVeröffentlicht - 1 März 2005

ASJC Scopus subject areas

  • Geochemie und Petrologie

Fingerprint

Untersuchen Sie die Forschungsthemen von „The dissolution rates of gibbsite in the presence of chloride, nitrate, silica, sulfate, and citrate in open and closed systems at 20°C“. Zusammen bilden sie einen einzigartigen Fingerprint.

Dieses zitieren