Simulation of the proton implantation process in silicon

Martin Faccinelli, Moriz Jelinek, Thomas Wuebben, Johannes G. Laven, Hans-Joachim Schulze, Peter Hadley

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Originalsprache	englisch
Seitenumfang	6
Fachzeitschrift	Physica Status Solidi (C) - Current Topics in Solid State Physics
DOIs	https://doi.org/10.1002/pssc.201600038
Publikationsstatus	Veröffentlicht - 19 Juli 2016

Fields of Expertise

@article{c85c89a20fa040d8a4e2427695bd7297,

title = "Simulation of the proton implantation process in silicon",

keywords = " proton implantation, defect complexes, process simulation, diffusion-reaction-dissociation",

author = "Martin Faccinelli and Moriz Jelinek and Thomas Wuebben and Laven, {Johannes G.} and Hans-Joachim Schulze and Peter Hadley",

year = "2016",

month = jul,

day = "19",

doi = "10.1002/pssc.201600038",

language = "English",

journal = "Physica Status Solidi (C) - Current Topics in Solid State Physics",

issn = "1610-1642",

publisher = "Wiley-VCH ",

}

TY - JOUR

T1 - Simulation of the proton implantation process in silicon

AU - Faccinelli, Martin

AU - Jelinek, Moriz

AU - Wuebben, Thomas

AU - Laven, Johannes G.

AU - Schulze, Hans-Joachim

AU - Hadley, Peter

PY - 2016/7/19

Y1 - 2016/7/19

KW - proton implantation

KW - defect complexes

KW - process simulation

KW - diffusion-reaction-dissociation

U2 - 10.1002/pssc.201600038

DO - 10.1002/pssc.201600038

M3 - Article

SN - 1610-1642

JO - Physica Status Solidi (C) - Current Topics in Solid State Physics

JF - Physica Status Solidi (C) - Current Topics in Solid State Physics

ER -