SIMS Characterisation of Chemical Solution Deposited Thin Film Systems of BaTiO3/X (X = LaNiO3, La0,5Sr0,5CoO3, La0,7Sr0,3MnO3) on a Platinized Silicon Wafer

Anton Busic; Klaus Reichmann; Herbert Hutter; Christoph Pollak

SIMS Characterisation of Chemical Solution Deposited Thin Film Systems of BaTiO3/X (X = LaNiO3, La0,5Sr0,5CoO3, La0,7Sr0,3MnO3) on a Platinized Silicon Wafer

Anton Busic, Klaus Reichmann, Herbert Hutter, Christoph Pollak

Institut für Chemische Technologie von Materialien (6380)

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Originalsprache	englisch
Seiten (von - bis)	218-223
Fachzeitschrift	Thin Solid Films
Jahrgang	405
Publikationsstatus	Veröffentlicht - 2002

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title = "SIMS Characterisation of Chemical Solution Deposited Thin Film Systems of BaTiO3/X (X = LaNiO3, La0,5Sr0,5CoO3, La0,7Sr0,3MnO3) on a Platinized Silicon Wafer",

author = "Anton Busic and Klaus Reichmann and Herbert Hutter and Christoph Pollak",

year = "2002",

language = "English",

volume = "405",

pages = "218--223",

journal = "Thin Solid Films",

issn = "1879-2731",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - SIMS Characterisation of Chemical Solution Deposited Thin Film Systems of BaTiO3/X (X = LaNiO3, La0,5Sr0,5CoO3, La0,7Sr0,3MnO3) on a Platinized Silicon Wafer

AU - Busic, Anton

AU - Reichmann, Klaus

AU - Hutter, Herbert

AU - Pollak, Christoph

PY - 2002

Y1 - 2002

M3 - Article

SN - 1879-2731

VL - 405

SP - 218

EP - 223

JO - Thin Solid Films

JF - Thin Solid Films

ER -