Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure

J. Ivanco, J. R. Krenn, M. G. Ramsey, F. P. Netzer, Thomas Haber, Roland Resel, A. Haase, B. Stadlober, G. Jakopic

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Originalspracheenglisch
Seiten (von - bis)2716-2724
FachzeitschriftJournal of Applied Physics
Jahrgang96
Ausgabenummer5
PublikationsstatusVeröffentlicht - 2004

Treatment code (Nähere Zuordnung)

  • Experimental

Dies zitieren

Ivanco, J., Krenn, J. R., Ramsey, M. G., Netzer, F. P., Haber, T., Resel, R., ... Jakopic, G. (2004). Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure. Journal of Applied Physics, 96(5), 2716-2724.

Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure. / Ivanco, J.; Krenn, J. R.; Ramsey, M. G.; Netzer, F. P.; Haber, Thomas; Resel, Roland; Haase, A.; Stadlober, B.; Jakopic, G.

in: Journal of Applied Physics, Jahrgang 96, Nr. 5, 2004, S. 2716-2724.

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Ivanco, J, Krenn, JR, Ramsey, MG, Netzer, FP, Haber, T, Resel, R, Haase, A, Stadlober, B & Jakopic, G 2004, 'Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure' Journal of Applied Physics, Jg. 96, Nr. 5, S. 2716-2724.
Ivanco, J. ; Krenn, J. R. ; Ramsey, M. G. ; Netzer, F. P. ; Haber, Thomas ; Resel, Roland ; Haase, A. ; Stadlober, B. ; Jakopic, G. / Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure. in: Journal of Applied Physics. 2004 ; Jahrgang 96, Nr. 5. S. 2716-2724.
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AU - Haber, Thomas

AU - Resel, Roland

AU - Haase, A.

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