Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure

J. Ivanco; J. R. Krenn; M. G. Ramsey; F. P. Netzer; Thomas Haber; Roland Resel; A. Haase; B. Stadlober; G. Jakopic

Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure

J. Ivanco, J. R. Krenn, M. G. Ramsey, F. P. Netzer, Thomas Haber, Roland Resel, A. Haase, B. Stadlober, G. Jakopic

Institut für Festkörperphysik (5130)

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Originalsprache	englisch
Seiten (von - bis)	2716-2724
Fachzeitschrift	Journal of Applied Physics
Jahrgang	96
Ausgabenummer	5
Publikationsstatus	Veröffentlicht - 2004

Treatment code (Nähere Zuordnung)

Experimental

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title = "Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure",

author = "J. Ivanco and Krenn, {J. R.} and Ramsey, {M. G.} and Netzer, {F. P.} and Thomas Haber and Roland Resel and A. Haase and B. Stadlober and G. Jakopic",

year = "2004",

language = "English",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Sexithiophene films on clean and oxidized Si(111) surfaces: growth and electronic structure

AU - Ivanco, J.

AU - Krenn, J. R.

AU - Ramsey, M. G.

AU - Netzer, F. P.

AU - Haber, Thomas

AU - Resel, Roland

AU - Haase, A.

AU - Stadlober, B.

AU - Jakopic, G.

PY - 2004

Y1 - 2004

M3 - Article

SN - 1089-7550

VL - 96

SP - 2716

EP - 2724

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

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