A formalism is proposed that allows an efficient computation of the exchange-correlation functional including the nonlocal exchange and dynamical screening correctly. In combination with LDA band structures this functional leads to remarkably good results for semiconductors and even wide gap insulators. The model furthermore provides a qualitative understanding of electronic many-body effects.
von der Linden, W., Horsch, P., & Lukas, W-D. (1986). Self-energy corrections to the local density band structure of semiconductors and insulators. Solid state communications, 59(7), 485-490. https://doi.org/10.1016/0038-1098(86)90693-9