Optimized gate driver for high-frequency buck converter

Volha Subotskaya; Vratislav Mihal; Mikhail Tulupov; Bernd Deutschmann

doi:10.1007/s00502-017-0570-7

Optimized gate driver for high-frequency buck converter

Titel in Übersetzung: Optimierte Gatetreiber für hochfrequente Tiefsetzsteller

Volha Subotskaya^*, Vratislav Mihal, Mikhail Tulupov, Bernd Deutschmann

^*Korrespondierende/r Autor/-in für diese Arbeit

Institut für Elektronik (4390)

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Abstract

Durch die steigende Komplexität der Systeme im Automobil-Bereich gewinnt das Thema elektromagnetische Emission und Effizienz immer mehr an Bedeutung. Gängige Methoden zur Reduzierung der elektromagnetischen Emissionen sind die Einführung externer Eingangsfilter, die Anwendung von so genannten Spreitzfrequenzverfahren und die Anpassung der Steilheit der Ausgangstreiber. In diesem Artikel wird ein Konzept für einen Ausgangstreiber mit adaptiver Treiberstärkeregulierung und Totzeitoptimierung für hochfrequente Tiefsetzsteller mit externen MOSFETs präsentiert. Das vorgeschlagene Konzept erreicht Verbesserungen in den folgenden Bereichen: verbesserte Regelung der Schaltaktivität für einen definierten Frequenzbereich, Optimierung der Effizienz durch Minimierung der Vorwärtsleitung der body diode, Reduzierung von Sperrverzögerungsverlusten und Nullspannungsschalten. All diese Punkte können trotz der unbekannten Parameterverteilung der verwendeten MOSFETs (Ein-/Ausschaltverzögerung, Gate-Widerstand des Gehäuses, Miller-Gate-Ladung) und externer Einflüsse (Temperatur, Eingangsspannung, Laststrom) erreicht werden. Das vorgeschlagene Konzept wurde auf einem Tiefsetzsteller für eine Ausgangsspannung von 1,2 V und eine Schaltfrequenz von 1,8 MHz implementiert.

Titel in Übersetzung	Optimierte Gatetreiber für hochfrequente Tiefsetzsteller
Originalsprache	englisch
Seiten (von - bis)	40-47
Fachzeitschrift	Elektrotechnik und Informationstechnik
Jahrgang	135
DOIs	https://doi.org/10.1007/s00502-017-0570-7
Publikationsstatus	Veröffentlicht - 2018

Schlagwörter

body diode conduction
buck converter
dead time
EMC
EME
gate driver

ASJC Scopus subject areas

Elektrotechnik und Elektronik

Zugriff auf Dokument

10.1007/s00502-017-0570-7

Andere Dateien und Links

http://www.scopus.com/inward/record.url?scp=85040227710&partnerID=8YFLogxK

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title = "Optimized gate driver for high-frequency buck converter",

abstract = "With the increasing system complexity in the automotive business sector the integration of efficient and low electromagnetic emission (EME) switch mode power supplies (SMPS) is crucial. The main methods to bring down EME and keep high efficiency are to introduce external filters on the input and output sides, to use spread spectrum techniques on the switching frequency and to control the switching activity of output driver in the desired range. This paper presents the concept of output driver implementation with adaptive driver strength control and dead time optimization for high frequency buck converters with external power MOSFETs. The proposed concept allows the following characteristics to be achieved: improved control of switching activity in a closely defined range, efficiency optimization by minimization the body diode forward conduction, reduction of the reverse recovery losses and zero voltage switching. All these can be realized despite the unknown MOSFET technological parameter distribution (propagation on/off delay, gate resistance of the package, Miller gate charge) and the external parameters (temperature, input voltage, load current). The proposed concept was implemented for a 1.2 V output voltage and a 1.8 MHz switching frequency buck converter.",

keywords = "body diode conduction, buck converter, dead time, EMC, EME, gate driver",

author = "Volha Subotskaya and Vratislav Mihal and Mikhail Tulupov and Bernd Deutschmann",

year = "2018",

doi = "10.1007/s00502-017-0570-7",

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AU - Subotskaya, Volha

AU - Mihal, Vratislav

AU - Tulupov, Mikhail

AU - Deutschmann, Bernd

PY - 2018

Y1 - 2018

N2 - With the increasing system complexity in the automotive business sector the integration of efficient and low electromagnetic emission (EME) switch mode power supplies (SMPS) is crucial. The main methods to bring down EME and keep high efficiency are to introduce external filters on the input and output sides, to use spread spectrum techniques on the switching frequency and to control the switching activity of output driver in the desired range. This paper presents the concept of output driver implementation with adaptive driver strength control and dead time optimization for high frequency buck converters with external power MOSFETs. The proposed concept allows the following characteristics to be achieved: improved control of switching activity in a closely defined range, efficiency optimization by minimization the body diode forward conduction, reduction of the reverse recovery losses and zero voltage switching. All these can be realized despite the unknown MOSFET technological parameter distribution (propagation on/off delay, gate resistance of the package, Miller gate charge) and the external parameters (temperature, input voltage, load current). The proposed concept was implemented for a 1.2 V output voltage and a 1.8 MHz switching frequency buck converter.

AB - With the increasing system complexity in the automotive business sector the integration of efficient and low electromagnetic emission (EME) switch mode power supplies (SMPS) is crucial. The main methods to bring down EME and keep high efficiency are to introduce external filters on the input and output sides, to use spread spectrum techniques on the switching frequency and to control the switching activity of output driver in the desired range. This paper presents the concept of output driver implementation with adaptive driver strength control and dead time optimization for high frequency buck converters with external power MOSFETs. The proposed concept allows the following characteristics to be achieved: improved control of switching activity in a closely defined range, efficiency optimization by minimization the body diode forward conduction, reduction of the reverse recovery losses and zero voltage switching. All these can be realized despite the unknown MOSFET technological parameter distribution (propagation on/off delay, gate resistance of the package, Miller gate charge) and the external parameters (temperature, input voltage, load current). The proposed concept was implemented for a 1.2 V output voltage and a 1.8 MHz switching frequency buck converter.

KW - body diode conduction

KW - buck converter

KW - dead time

KW - EMC

KW - EME

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ER -

Optimized gate driver for high-frequency buck converter

Abstract

Schlagwörter

ASJC Scopus subject areas

Zugriff auf Dokument

Andere Dateien und Links

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