Nucleation kinetics of entrained eutectic Si in Al–5Si alloys

A series of high-purity Al–5 wt.% Si alloys with trace additions of Sr, Fe and P were prepared by using arc-melting and subsequent melt-spinning. The nucleation phenomenon incorporating the free growth criterion of eutectic Si was investigated by using the entrained droplet technique, atomic resolution scanning transmission electron microscopy and differential scanning calorimetry. It was found that Sr addition exerts no positive effect on the nucleation process; instead, an increased undercooling was observed. A combined addition of Sr and Fe further increased the undercooling, as compared with the addition of Sr only. Only trace P addition has a profound effect on the nucleation of Si by a proposed formation of AlP patches on primary Al. The estimated AlP patch size was found to be sufficient for the free growth of Si to occur inside the eutectic droplet. Nucleation kinetics was discussed on the basis of classical nucleation theory and the free growth model. For the first time, realistic and physically meaningful nucleation site values were obtained. The interactions between Sr and P were also highlighted. This investigation demonstrates strong experimental supports for the free growth nucleation kinetics and the well-accepted impurity-induced twinning growth mechanism, as well as the poisoning of the twin plane re-entrant edge growth mechanism.