Low TID effects on MOS transistors

Varvara Bezhenova; Alicja Malgorzata Michalowska-Forsyth; Walter Pflanzl

doi:10.1109/RADECS45761.2018.9328689

Low TID effects on MOS transistors

Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth, Walter Pflanzl

Institut für Elektronik (4390)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Abstract

MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID

Originalsprache	englisch
Titel	2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Erscheinungsort	Gothenburg
Seitenumfang	4
DOIs	https://doi.org/10.1109/RADECS45761.2018.9328689
Publikationsstatus	Veröffentlicht - 2021
Veranstaltung	18th Conference on Radiation Effects on Components and Systems : RADECS 2018 - Gothenburg, Schweden Dauer: 16 Sept. 2018 → 21 Sept. 2018 http://www.radecs2018.org/

Konferenz

Konferenz	18th Conference on Radiation Effects on Components and Systems
Kurztitel	RADECS 2018
Land/Gebiet	Schweden
Ort	Gothenburg
Zeitraum	16/09/18 → 21/09/18
Internetadresse	http://www.radecs2018.org/

ASJC Scopus subject areas

Elektrotechnik und Elektronik
Strahlung

Treatment code (Nähere Zuordnung)

Basic - Fundamental (Grundlagenforschung)
Experimental

Zugriff auf Dokument

10.1109/RADECS45761.2018.9328689

1 Konferenz oder Fachtagung (Teilnahme an/Organisation von)
1 Posterpräsentation

18th Conference on Radiation Effects on Components and Systems
Varvara Bezhenova (Teilnehmer/-in) & Alicja Malgorzata Michalowska-Forsyth (Teilnehmer/-in)
16 Sept. 2018 → 21 Sept. 2018
Aktivität: Teilnahme an / Organisation von › Konferenz oder Fachtagung (Teilnahme an/Organisation von)
Low TID effects on MOS transistors
Varvara Bezhenova (Redner/in), Alicja Malgorzata Michalowska-Forsyth (Redner/in) & Walter Pflanzl (Beitragende/r)
19 Sept. 2018
Aktivität: Vortrag oder Präsentation › Posterpräsentation › Science to science

Dieses zitieren

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title = "Low TID effects on MOS transistors",

abstract = "MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID ",

author = "Varvara Bezhenova and Michalowska-Forsyth, {Alicja Malgorzata} and Walter Pflanzl",

year = "2021",

doi = "10.1109/RADECS45761.2018.9328689",

language = "English",

booktitle = "2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)",

note = "18th Conference on Radiation Effects on Components and Systems : RADECS 2018, RADECS 2018 ; Conference date: 16-09-2018 Through 21-09-2018",

url = "http://www.radecs2018.org/",

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TY - GEN

T1 - Low TID effects on MOS transistors

AU - Bezhenova, Varvara

AU - Michalowska-Forsyth, Alicja Malgorzata

AU - Pflanzl, Walter

PY - 2021

Y1 - 2021

N2 - MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID

AB - MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID

U2 - 10.1109/RADECS45761.2018.9328689

DO - 10.1109/RADECS45761.2018.9328689

M3 - Conference paper

BT - 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

CY - Gothenburg

T2 - 18th Conference on Radiation Effects on Components and Systems

Y2 - 16 September 2018 through 21 September 2018

ER -

Low TID effects on MOS transistors

Abstract

Konferenz

ASJC Scopus subject areas

Treatment code (Nähere Zuordnung)

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Aktivitäten

18th Conference on Radiation Effects on Components and Systems

Low TID effects on MOS transistors

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