Investigations on CMOS photodiodes using scanning electron microscopy with electron beam induced current measurements

A. Kraxner, F. Roger, B. Loeffler, M. Faccinelli, S. Kirnstoetter, R. Minixhofer, P. Hadley

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Abstract

In this work the characterization of CMOS diodes with Electron Beam Induced Current (EBIC) measurements in a Scanning Electron Microscope (SEM) are presented. Three-dimensional Technology Computer Aided Design (TCAD) simulations of the EBIC measurement were performed for the first time to help interpret the experimental results. The TCAD simulations provide direct access to the spatial distribution of physical quantities (like mobility, lifetime etc.) which are very difficult to obtain experimentally. For the calibration of the simulation to the experiments, special designs of vertical p-n diodes were fabricated. These structures were investigated with respect to doping concentration, beam energy, and biasing. A strong influence of the surface preparation on the measurements and the extracted diffusion lengths are shown.

Originalspracheenglisch
TitelScanning Microscopies 2014
Herausgeber (Verlag)SPIE
Band9236
ISBN (Print)9781628412994
DOIs
PublikationsstatusVeröffentlicht - 2014
VeranstaltungScanning Microscopies 2014 - Monterey, USA / Vereinigte Staaten
Dauer: 16 Sep 201418 Sep 2014

Konferenz

KonferenzScanning Microscopies 2014
LandUSA / Vereinigte Staaten
OrtMonterey
Zeitraum16/09/1418/09/14

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    ASJC Scopus subject areas

    • Angewandte Mathematik
    • !!Computer Science Applications
    • !!Electrical and Electronic Engineering
    • !!Electronic, Optical and Magnetic Materials
    • !!Condensed Matter Physics

    Dieses zitieren

    Kraxner, A., Roger, F., Loeffler, B., Faccinelli, M., Kirnstoetter, S., Minixhofer, R., & Hadley, P. (2014). Investigations on CMOS photodiodes using scanning electron microscopy with electron beam induced current measurements. in Scanning Microscopies 2014 (Band 9236). [923607] SPIE. https://doi.org/10.1117/12.2066124