Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance

Gernot Gruber, Thomas Aichinger, Gregor Pobegen, Dethard Peters, Markus Koch, Peter Hadley

Publikation: Beitrag in Buch/Bericht/KonferenzbandBeitrag in einem KonferenzbandForschungBegutachtung

Abstract

Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.

Originalspracheenglisch
TitelSilicon Carbide and Related Materials 2015
Herausgeber (Verlag)Trans Tech Publications Ltd.
Seiten643-646
Seitenumfang4
Band858
ISBN (Print)9783035710427
DOIs
PublikationsstatusVeröffentlicht - 2016
Veranstaltung16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italien
Dauer: 4 Okt 20159 Okt 2015

Publikationsreihe

NameMaterials Science Forum
Band858
ISSN (Print)02555476

Konferenz

Konferenz16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
LandItalien
OrtSicily
Zeitraum4/10/159/10/15

    Fingerprint

Schlagwörter

    ASJC Scopus subject areas

    • !!Materials Science(all)
    • !!Condensed Matter Physics
    • !!Mechanical Engineering
    • !!Mechanics of Materials

    Dieses zitieren

    Gruber, G., Aichinger, T., Pobegen, G., Peters, D., Koch, M., & Hadley, P. (2016). Influence of oxide processing on the defects at the SiC-SiO2 interface measured by electrically detected magnetic resonance. in Silicon Carbide and Related Materials 2015 (Band 858, S. 643-646). (Materials Science Forum; Band 858). Trans Tech Publications Ltd.. https://doi.org/10.4028/www.scientific.net/MSF.858.643