In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

J. Strobel, M. Hansen, S. Dirkmann, K.K. Neelisetty, M. Ziegler, Georg Haberfehlner, R. Popescu, Gerald Kothleitner, V.S. Chakravadhanula, C. Kübel, H. Kohlestedt, T. Mussenbrock, L. Kienle

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Abstract

Memristors based on a double barrier design have been analyzed by various nanospectroscopic methods to unveil details about their microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between the Nb bottom electrode and the Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e., oxidation state of the metals as well as concentration and distribution of oxygen ions, has a major influence on electronic conduction, these factors were carefully analyzed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the deviations between observed and originally sought layout, this study highlights the robustness of the memristive function in terms of structural deviations of the double barrier memristor device. © 2017 Author(s).
Originalspracheenglisch
Aufsatznummer245307
Seiten (von - bis)245307
Seitenumfang23
FachzeitschriftJournal of Applied Physics
Jahrgang212
Ausgabenummer24
DOIs
PublikationsstatusVeröffentlicht - 2017

ASJC Scopus subject areas

  • !!Materials Science(all)

Fields of Expertise

  • Advanced Materials Science

Treatment code (Nähere Zuordnung)

  • Basic - Fundamental (Grundlagenforschung)

Dies zitieren

Strobel, J., Hansen, M., Dirkmann, S., Neelisetty, K. K., Ziegler, M., Haberfehlner, G., ... Kienle, L. (2017). In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices. Journal of Applied Physics, 212(24), 245307. [245307]. https://doi.org/10.1063/1.4990145

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices. / Strobel, J.; Hansen, M.; Dirkmann, S.; Neelisetty, K.K.; Ziegler, M.; Haberfehlner, Georg; Popescu, R.; Kothleitner, Gerald; Chakravadhanula, V.S.; Kübel, C.; Kohlestedt, H.; Mussenbrock, T.; Kienle, L.

in: Journal of Applied Physics, Jahrgang 212, Nr. 24, 245307, 2017, S. 245307.

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Strobel, J, Hansen, M, Dirkmann, S, Neelisetty, KK, Ziegler, M, Haberfehlner, G, Popescu, R, Kothleitner, G, Chakravadhanula, VS, Kübel, C, Kohlestedt, H, Mussenbrock, T & Kienle, L 2017, 'In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices' Journal of Applied Physics, Jg. 212, Nr. 24, 245307, S. 245307. https://doi.org/10.1063/1.4990145
Strobel, J. ; Hansen, M. ; Dirkmann, S. ; Neelisetty, K.K. ; Ziegler, M. ; Haberfehlner, Georg ; Popescu, R. ; Kothleitner, Gerald ; Chakravadhanula, V.S. ; Kübel, C. ; Kohlestedt, H. ; Mussenbrock, T. ; Kienle, L. / In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices. in: Journal of Applied Physics. 2017 ; Jahrgang 212, Nr. 24. S. 245307.
@article{042307a4ccf847e48ad40ded74ab66db,
title = "In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices",
abstract = "Memristors based on a double barrier design have been analyzed by various nanospectroscopic methods to unveil details about their microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between the Nb bottom electrode and the Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e., oxidation state of the metals as well as concentration and distribution of oxygen ions, has a major influence on electronic conduction, these factors were carefully analyzed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the deviations between observed and originally sought layout, this study highlights the robustness of the memristive function in terms of structural deviations of the double barrier memristor device. {\circledC} 2017 Author(s).",
author = "J. Strobel and M. Hansen and S. Dirkmann and K.K. Neelisetty and M. Ziegler and Georg Haberfehlner and R. Popescu and Gerald Kothleitner and V.S. Chakravadhanula and C. K{\"u}bel and H. Kohlestedt and T. Mussenbrock and L. Kienle",
year = "2017",
doi = "10.1063/1.4990145",
language = "English",
volume = "212",
pages = "245307",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

AU - Strobel, J.

AU - Hansen, M.

AU - Dirkmann, S.

AU - Neelisetty, K.K.

AU - Ziegler, M.

AU - Haberfehlner, Georg

AU - Popescu, R.

AU - Kothleitner, Gerald

AU - Chakravadhanula, V.S.

AU - Kübel, C.

AU - Kohlestedt, H.

AU - Mussenbrock, T.

AU - Kienle, L.

PY - 2017

Y1 - 2017

N2 - Memristors based on a double barrier design have been analyzed by various nanospectroscopic methods to unveil details about their microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between the Nb bottom electrode and the Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e., oxidation state of the metals as well as concentration and distribution of oxygen ions, has a major influence on electronic conduction, these factors were carefully analyzed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the deviations between observed and originally sought layout, this study highlights the robustness of the memristive function in terms of structural deviations of the double barrier memristor device. © 2017 Author(s).

AB - Memristors based on a double barrier design have been analyzed by various nanospectroscopic methods to unveil details about their microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky barrier sandwiched between the Nb bottom electrode and the Au top electrode. As it was anticipated that the local chemical composition of the tunnel barrier, i.e., oxidation state of the metals as well as concentration and distribution of oxygen ions, has a major influence on electronic conduction, these factors were carefully analyzed. A combined approach was chosen in order to reliably investigate electronic states of Nb and O by electron energy-loss spectroscopy as well as map elements whose transition edges exhibit a different energy range by energy-dispersive X-ray spectroscopy like Au and Al. The results conclusively demonstrate significant oxidation of the bottom electrode as well as a small oxygen vacancy concentration in the Al oxide tunnel barrier. Possible scenarios to explain this unexpected additional oxide layer are discussed and kinetic Monte Carlo simulations were applied in order to identify its influence on conduction mechanisms in the device. In light of the deviations between observed and originally sought layout, this study highlights the robustness of the memristive function in terms of structural deviations of the double barrier memristor device. © 2017 Author(s).

U2 - 10.1063/1.4990145

DO - 10.1063/1.4990145

M3 - Article

VL - 212

SP - 245307

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 24

M1 - 245307

ER -