Imaging of ultrathin silicon dioxide layers in semiconducting devices by means of energy-filtered transmission electron microscopy

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Originalsprache	englisch
Seiten (von - bis)	405-408
Fachzeitschrift	Institute of Physics Conference Series
Jahrgang	180
Publikationsstatus	Veröffentlicht - 2004

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@article{34790c2261104d1eaea7b153ffd4ac8f,

title = "Imaging of ultrathin silicon dioxide layers in semiconducting devices by means of energy-filtered transmission electron microscopy",

author = "Bernhard Schaffer and Werner Grogger and Ferdinand Hofer",

year = "2004",

language = "English",

volume = "180",

pages = "405--408",

journal = "Institute of Physics Conference Series",

publisher = "IOP Publishing Ltd.",

}